Allicdata Part #: | SIA110DJ-T1-GE3TR-ND |
Manufacturer Part#: |
SIA110DJ-T1-GE3 |
Price: | $ 0.29 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET N-CHAN 100V POWERPAK SC-7 |
More Detail: | N-Channel 100V 5.4A (Ta), 12A (Tc) 3.5W (Ta), 19W ... |
DataSheet: | SIA110DJ-T1-GE3 Datasheet/PDF |
Quantity: | 1000 |
3000 +: | $ 0.26706 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | PowerPAK® SC-70-6 |
Supplier Device Package: | PowerPAK® SC-70-6 Single |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 3.5W (Ta), 19W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 550pF @ 50V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 13nC @ 10V |
Series: | TrenchFET® Gen IV |
Rds On (Max) @ Id, Vgs: | 55 mOhm @ 4A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 7.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 5.4A (Ta), 12A (Tc) |
Drain to Source Voltage (Vdss): | 100V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The SIA110DJ-T1-GE3 is a single field-effect transistor (FET), more specifically a Metal-Oxide-Semiconductor FET (MOSFET). It\'s a relatively advanced FET with improved characteristics when compared to the earlier generations of FETs. It is specifically designed for switching applications that require high efficiency and fast switching times, while also providing great power output with minimal power loss.The main advantage of a MOSFET over an ordinary transistor is its low power consumption. Unlike ordinary transistors, a MOSFET does not require any power to keep its on/off state. This is because the MOSFET is designed to use the electric field of its input signal to switch on or off the MOSFET without the need for any additional power. A SIA110DJ-T1-GE3 is an N-channel FET, meaning that it allows current to flow in one direction only. It has a drain, a source, and two gates, the gate and the drain. In operation, the gate is used to control the flow of current from the source to the drain; its enable signal allows current to flow from the source to the drain, otherwise current is blocked.In order to make the most out of the SIA110DJ-T1-GE3, it is important to understand its capability and limitations. Its maximum frequency is 100MHz, which allows for fast switching. It has a maximum drain-source voltage of 100V, and a gate-source voltage of +/- 20V. The maximum drain-source on-state resistance is 9.8 Ohms, and the maximum output capacitance is roughly 1.1nF.The SIA110DJ-T1-GE3 is commonly used in switching power supplies, DC-to-DC converters, signal processing, and general analog circuits. It is also capable of handling high-frequency signal processing, like in switching speaker systems, and are becoming increasingly popular in power circuits with high power outputs.In terms of its applications, the SIA110DJ-T1-GE3 is best used in circuits that require fast switching at high voltages, such as DC-to-DC converters, switching power supplies, and other higher power analog designs. It is also ideal for applications that require ultra-low power consumption, such as signal processing and communication systems. Finally, some of the advantages of the SIA110DJ-T1-GE3 are its fast switching times, low power consumption, and low on-state resistance. As the technology evolves, so does the SIA110DJ-T1-GE3, making it a great choice for applications that require varying levels of control and efficiency.
The specific data is subject to PDF, and the above content is for reference
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