SIAA00DJ-T1-GE3 Allicdata Electronics
Allicdata Part #:

SIAA00DJ-T1-GE3TR-ND

Manufacturer Part#:

SIAA00DJ-T1-GE3

Price: $ 0.14
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Siliconix
Short Description: MOSFET N-CHAN 25V
More Detail: N-Channel 25V 20.1A (Ta), 40A (Tc) 3.5W (Ta), 19.2...
DataSheet: SIAA00DJ-T1-GE3 datasheetSIAA00DJ-T1-GE3 Datasheet/PDF
Quantity: 1000
1 +: $ 0.13600
10 +: $ 0.13192
100 +: $ 0.12920
1000 +: $ 0.12648
10000 +: $ 0.12240
Stock 1000Can Ship Immediately
$ 0.14
Specifications
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Package / Case: PowerPAK® SC-70-6
Supplier Device Package: PowerPAK® SC-70-6 Single
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 3.5W (Ta), 19.2W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 1090pF @ 12.5V
Vgs (Max): +16V, -12V
Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V
Series: TrenchFET® Gen IV
Rds On (Max) @ Id, Vgs: 5.6 mOhm @ 15A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 20.1A (Ta), 40A (Tc)
Drain to Source Voltage (Vdss): 25V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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SIAA00DJ-T1-GE3 is a single Enhancement Mode Field Effect Transistor (FET) manufactured in a through-hole package and is used for various applications due to its ability to quickly switch and deliver high power. It is most commonly used to control DC motor speed, illumination, and to regulate energy. Its package is a TO-92 plastic case that simplifies manufacturing. This device has a drain, a source, and a gate, which are the three main components of field effect transistors.

The SIAA00DJ-T1-GE3 has a drain current of up to 9.3A and a drain-source voltage of up to 100V. It has a maximum gate-source voltage of 20V, a gate-drain voltage of 20V, and an on-state drain current of 9.3A. The Gate-Source Threshold Voltage is set at 2V and can be adjusted to 0.2V.

The SIAA00DJ-T1-GE3 belongs to a class of FETs known as Enhancement Mode FETs. This type of FET has no internal biasing within the device and is instead externally biased. This means that the gate voltage is used to control the current flowing between the source and the drain. When the gate voltage is increased (to a certain point), more current will flow between the source and the drain, and vice versa for decreasing the gate voltage. By controlling the current flow between the source and drain, this device can act as an amplifier or switch, making it ideal for controlling DC motor speed, illumination, and regulating energy.

The SIAA00DJ-T1-GE3 is used in many applications due to its ability to handle high current, allowing it to efficiently control DC motors. The device can also be used to regulate the power delivery to various components such as an LED, reducing the possibility of damaging the component. In addition, it can be used as a switch, either to switch on/off a device or to control the brightness of an LED or light bulb.

The SIAA00DJ-T1-GE3 has become a popular choice for many modern applications due to its ability to quickly switch and deliver high power. Its TO-92 package simplifies the manufacturing process and its tolerance to high current makes it a great choice for controlling DC motors, regulating energy, and controlling lights. The gate voltage can be adjusted to control the current flow, making it a versatile choice for various applications.

The specific data is subject to PDF, and the above content is for reference

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