SIB800EDK-T1-GE3

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The SIB800EDK-T1-GE3 is a high-power field effect transistor. It is part of a family of field effect transistors (FETs) designed to meet the needs of many high-power applications. The SIB800EDK-T1-GE3 is a single FET, meaning it consists of one FET gate and two p-type and n-type regions which form the source, gate and drain. The SIB800EDK-T1-GE3 is made from a silicon substrate and uses a high-resistance silicate-oxide to isolate the source from the rest of the circuit. The FET\'s gate is made from a layer of thin conductive film and a thin dielectric layer to protect the gate from being exposed to the source. The FET is rated for a Drain Source Voltage of 600V and a Drain Current of 17A. The maximum Drain Source on-state resistance is 101m_ohm and the total gate charge is 32nC.

The SIB800EDK-T1-GE3 is primarily used in power converters and rectifiers, where it is used to control the current flow and voltage in the circuit. It can also be used in high-power Amplifiers and Voltage Regulators. Additionally, this FET can be used in Pulse Width Modulated (PWM) circuits to vary the output of the power device. The FET\'s low drain-source on-state resistance makes it an ideal choice in applications where high efficiency and low power dissipation are required. The SIB800EDK-T1-GE3 can operate at frequencies up to 1MHz, making it suitable for high-speed switching applications.

The SIB800EDK-T1-GE3 has a symmetrical structure, meaning that the drain and source are connected in parallel which gives the FET a higher bandwidth for higher frequencies. The FET also has two back-to-back Gates which allow for bi-directional current flow and a low input signal capacitance. The SIB800EDK-T1-GE3 has a relatively high breakdown voltage and can handle large currents without being damaged. Additionally, the FET has low gate drive requirements, meaning it requires less power to switch on and off.

The SIB800EDK-T1-GE3 has been designed to be able to withstand a wide temperature range, making it suitable for applications which require robustness and reliability. Additionally, the FET has a low thermal resistance, meaning it is able to dissipate heat efficiently. The SIB800EDK-T1-GE3 is also RoHS compliant, meaning it contains no hazardous substances.

In summary, the SIB800EDK-T1-GE3 is a single field effect transistor with an array of characteristics which make it ideal for high power applications. Its high voltage and current ratings, low on-state resistance, symmetrical structure and low gate drive requirements make it well suited for power converters and rectifiers, PWM applications and voltage regulators. The FET also has the advantage of being RoHS compliant, able to withstand a wide temperature range and dissipate heat efficiently.

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