| Allicdata Part #: | SIE726DF-T1-E3-ND |
| Manufacturer Part#: |
SIE726DF-T1-E3 |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Vishay Siliconix |
| Short Description: | MOSFET N-CH 30V 60A POLARPAK |
| More Detail: | N-Channel 30V 60A (Tc) 5.2W (Ta), 125W (Tc) Surfac... |
| DataSheet: |  SIE726DF-T1-E3 Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
| Vgs(th) (Max) @ Id: | 3V @ 250µA |
| Package / Case: | 10-PolarPAK® (L) |
| Supplier Device Package: | 10-PolarPAK® (L) |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 5.2W (Ta), 125W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 7400pF @ 15V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 160nC @ 10V |
| Series: | SkyFET®, TrenchFET® |
| Rds On (Max) @ Id, Vgs: | 2.4 mOhm @ 25A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
| Current - Continuous Drain (Id) @ 25°C: | 60A (Tc) |
| Drain to Source Voltage (Vdss): | 30V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Obsolete |
| Packaging: | Tape & Reel (TR) |
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SIE726DF-T1-E3, also known as a TMBS N-channel SmartPower MOSFET, is a specialty device designed by Vishay Semiconductor for the purpose of providing power electronics applications with an effective way to switch loads. This MOSFET is designed to offer high levels of efficiency and performance, while still allowing for easy control, making it ideal for many modern applications.
Due to its small size and relative low power requirement, SIE726DF-T1-E3 has been successfully used in a wide range of applications, including: industrial, medical, automotive, and consumer applications. In addition to these, the device can also be used in renewable energy systems, telecommunications systems and for high power load switching.
The underlying technology of the SIE726DF-T1-E3 is a controlled avalanche MOSFET. This allows it to switch high currents at very low losses without any external bias or grounding needed. This is an important feature for applications requiring high levels of efficiency and performance. The device also features a low turn-on and turn-off time, which further increases its performance potential.
The SIE726DF-T1-E3 offers a range of other features and benefits to users. It has a low on-resistance, allowing it to operate at higher currents with good input and output characteristics. As well as this, the device also has high tolerances on thermal and transient conditions. Compared to standard MOSFETs, the turn-off time of the device is under 1µs.
The SIE726DF-T1-E3 is a high-performance power MOSFET, which is perfect for applications requiring low losses and high output currents. Its combination of low loss, low voltage and low power requirements, as well as its attractive total cost of ownership, make it an ideal choice for many power and switching applications. With its excellent characteristics, the device is a perfect fit for many applications.
In summary, the SIE726DF-T1-E3 is a high performance, controlled avalanche MOSFET designed by Vishay Semiconductor. It is a reliable and cost-effective device that is suitable for a wide range of applications, including those in industrial, medical, automotive and consumer products. The MOSFET has good input and output characteristics and is able to switch high currents with low losses. Its features such as low turn-on and turn-off times, as well as its high tolerance for thermal and transient conditions, make it a perfect fit for many high-power switching applications.
The specific data is subject to PDF, and the above content is for reference
| Part Number | Manufacturer | Price | Quantity | Description |
|---|
| SIE726DF-T1-E3 | Vishay Silic... | 0.0 $ | 1000 | MOSFET N-CH 30V 60A POLAR... |
| SIE726DF-T1-GE3 | Vishay Silic... | 0.0 $ | 1000 | MOSFET N-CH 30V 60A POLAR... |
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