SIHJ10N60E-T1-GE3

Vgs(th) (Max) @ Id:	4.5V @ 250µA
Package / Case:	8-PowerTDFN
Supplier Device Package:	PowerPAK® SO-8
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	89W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	784pF @ 100V
Vgs (Max):	±30V
Gate Charge (Qg) (Max) @ Vgs:	50nC @ 10V
Series:	E
Rds On (Max) @ Id, Vgs:	360 mOhm @ 5A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	10A (Tc)
Drain to Source Voltage (Vdss):	600V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Cut Tape (CT)

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The SIHJ10N60E-T1-GE3 is a type of Field Effect Transistor (FET) designed specifically for power applications. It is a single-channel device with great performance, allowing for higher efficiency and higher power output. It is one of the most popular FETs used in the industry today, making it an ideal choice for most power applications.ApplicationsThe SIHJ10N60E-T1-GE3 is a versatile transistor, making it suitable for a variety of power applications. It is frequently used in switch mode power supplies, linear switching converter designs, electronic lighting ballasts, UPS systems, and high-efficiency DC/DC converter designs. It is also used in high temperature and high inductance applications, including motor drives, mesh applications, and offline converters.BenefitsThe SIHJ10N60E-T1-GE3 provides several benefits due to its design and construction. It has a low on-resistance of only 60 mOhms and a self-resonant frequency up to 220 MHz, making it well-suited for high power applications. It also features a low gate-source capacitance, which minimizes switching losses. These features make the SIHJ10N60E-T1-GE3 well-suited for high efficiency applications. It also has a fast switching speed, which reduces switching losses and makes it more suitable for high frequency applications. Additionally, it has very low gate drive requirements, which allow it to work with small gate drivers. This also helps to reduce power consumption and improve efficiency.Working PrincipleThe SIHJ10N60E-T1-GE3 operates on the principle of a field effect transistor. It is a voltage-controlled device, meaning that the voltage applied to the gate terminal will control the current flow. When a positive voltage is applied to the gate terminal, the circuit is in forward-bias, allowing current to flow across the device. When a negative voltage is applied to the gate terminal, the circuit is in reverse-bias, which means it will not allow current to flow.The SIHJ10N60E-T1-GE3 is a versatile device, allowing it to be used in many different applications. It is an ideal choice for power applications due to its low on-resistance, fast switching speed, low gate drive requirements, and low gate-source capacitance, which all help to improve efficiency and reduce power consumption. With its wide range of applications and superior performance, the SIHJ10N60E-T1-GE3 is one of the most popular FETs available today.

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