| Allicdata Part #: | SIR330DP-T1-GE3TR-ND |
| Manufacturer Part#: |
SIR330DP-T1-GE3 |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Vishay Siliconix |
| Short Description: | MOSFET N-CH 30V 35A PPAK SO-8 |
| More Detail: | N-Channel 30V 35A (Tc) 5W (Ta), 27.7W (Tc) Surface... |
| DataSheet: |  SIR330DP-T1-GE3 Datasheet/PDF |
| Quantity: | 1000 |
| Vgs(th) (Max) @ Id: | 2.5V @ 250µA |
| Package / Case: | PowerPAK® SO-8 |
| Supplier Device Package: | PowerPAK® SO-8 |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 5W (Ta), 27.7W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 1300pF @ 15V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 35nC @ 10V |
| Series: | TrenchFET® |
| Rds On (Max) @ Id, Vgs: | 5.6 mOhm @ 10A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
| Current - Continuous Drain (Id) @ 25°C: | 35A (Tc) |
| Drain to Source Voltage (Vdss): | 30V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Obsolete |
| Packaging: | Tape & Reel (TR) |
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The SIR330DP-T1-GE3 is a n-channel enhancement mode silicon gate field-effect transistor. It is designed utilizing the firm’s latest high power silicon gate technology that is suitable for high density applications where superior levels of performance are required. It is fabricated using a proprietary field-stop trench process combined with advanced design features to deliver superior performance characteristics.
The SIR330DP-T1-GE3 is a medium power field-effect transistor (MOSFET) with a maximum drain current of 30 amps, a maximum drain-source voltage of 30 volts and a maximum gate threshold voltage of 3.3 volts. It is suitable for use in a wide range of high power applications, including power supplies, amplifiers and power management systems. The device offers superior power performance characteristics and is particularly suited for switching applications requiring high current and low gate drive voltages.
The SIR330DP-T1-GE3 has an enhanced Avalanche Current capability with a maximum rating of 15 amps. This ensures reliable performance in applications that require superior levels of performance. It also features a high saturation drain-source voltage of 1.5 volts which makes it ideal for power conversion systems. Other features include an improved gate charge, an improved gate-source voltage and a low input capacitance.
The SIR330DP-T1-GE3 operates by using a basic source-drain-gate structure. It consists of an n-channel enhancement mode field-effect transistor in which the source is connected to the drain and the gate is connected to a control voltage. The gate voltage can be used to control the flow of current between the source and drain. When the gate voltage is increased, the current flow from the source to the drain is increased (enhancement mode), and when the gate voltage is decreased, the current flow from the source to the drain is decreased (depletion mode).
The SIR330DP-T1-GE3 is particularly suited for applications that require fast switching speeds and low on-resistance. It is also ideal for high-efficiency power conversion systems, high-speed signal transmission and high-frequency radio applications. The device offers superior levels of performance over a wide temperature range and is highly reliable due to its enhanced Avalanche Current rating. It is also highly customizable and can be easily integrated into a full range of design solutions.
Overall, the SIR330DP-T1-GE3 offers superior performance characteristics over a wide range of applications, making it an ideal choice for designers in search of a medium power field-effect transistor. Its enhanced Avalanche Current rating and low gate drive voltage make it suited for a range of high power applications, while its enhanced gate charge, gate-source voltage, and low input capacitance make it perfect for power conversion and signal transmission.
The specific data is subject to PDF, and the above content is for reference
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