| Allicdata Part #: | SIS782DN-T1-GE3TR-ND |
| Manufacturer Part#: |
SIS782DN-T1-GE3 |
| Price: | $ 0.19 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Vishay Siliconix |
| Short Description: | MOSFET N-CH 30V 16A POWERPAK1212 |
| More Detail: | N-Channel 30V 16A (Tc) 41W (Tc) Surface Mount Powe... |
| DataSheet: |  SIS782DN-T1-GE3 Datasheet/PDF |
| Quantity: | 1000 |
| 3000 +: | $ 0.17019 |
Specifications
| Vgs(th) (Max) @ Id: | 2.3V @ 250µA |
| Package / Case: | PowerPAK® 1212-8 |
| Supplier Device Package: | PowerPAK® 1212-8 |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -50°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 41W (Tc) |
| FET Feature: | Schottky Diode (Body) |
| Input Capacitance (Ciss) (Max) @ Vds: | 1025pF @ 15V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 30.5nC @ 10V |
| Series: | -- |
| Rds On (Max) @ Id, Vgs: | 9.5 mOhm @ 10A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
| Current - Continuous Drain (Id) @ 25°C: | 16A (Tc) |
| Drain to Source Voltage (Vdss): | 30V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tape & Reel (TR) |
Description
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The SIS782DN-T1-GE3 is a single N-channel enhancement mode MOSFET that is ideally suited for use in power switching applications. It achieves fast switching with a minimum of power dissipation. The SIS782DN-T1-GE3 is designed to be used in electronic switching circuits instead of traditional electromechanical switches. It is capable of operating at frequencies up to 200 kHz and can handle peak currents up to 4 A without the need for external components. The device also features a robust, fast-recovery body diode, allowing it to be used in high-frequency, power-switching applications.The SIS782DN-T1-GE3 is an enhancement mode MOSFET, which means it requires an external voltage to turn on. When a positive voltage is applied to the Gate, electrons are attracted to the Gate, creating a conductive channel between the Source and Drain. This, in turn, allows the current to flow from the Source to the Drain. When the Gate voltage is removed, the electrons are repelled from the Gate, thus shutting off the device.The SIS782DN-T1-GE3 is a good choice for power switching applications because it has low ON-resistance and low gate charge. This combination of features results in lower power dissipation and faster switching speeds. The device is also very robust and capable of operating over a wide range of temperatures.The SIS782DN-T1-GE3 is a popular choice for power supply designs, motors, and consumer electronics applications. It is also suitable for applications where fast switching and low power dissipation are required. Its high peak current and surge current capabilities make it a cost-effective solution for many power switching designs.In summary, the SIS782DN-T1-GE3 is a single N-channel enhancement mode MOSFET that is suitable for use in power switching applications. It achieves fast switching with a minimum of power dissipation and features a robust and fast-recovery body diode. The device is capable of operating at frequencies up to 200kHz and can handle peak currents up to 4 A without the need for external components. It is a popular choice for power supply designs, motors, and consumer electronics applications, with its high peak current and surge current capabilities making it a cost-effective solution for many power switching designs.
The specific data is subject to PDF, and the above content is for reference
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