SISH617DN-T1-GE3

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

Thesish617DN-T1-GE3 is a high performance enhancement-mode MOSFET. They are widely used in power conversion circuits and switching applications. Thesish617DN-T1-GE3 has been improved for use in high-current switching applications, with the ability to switch reliably at peak switching currents up to 25A. They offer fast switch-off times, superior thermal performance and low RDS(ON) values which allow for energy efficiency and miniaturized designs.

Thesish617DN-T1-GE3 devices have a basic operating principle quite similar to that of a common bipolar transistor; it also utilizes the same terms for operation. However, instead of traditional transistors, Thesish617DN-T1-GE3 is a MOSFET (metal-oxide-semiconductor field effect transistor) with a N-channel. Thesish617DN-T1-GE3 is composed of three major terminals gate (G), drain (D), and source (S). The two p-type layers on each side of the gate form an insulated gate, and a conducting channel is created from the source to the drain by applying a voltage to the gate.

Applications for Thesish617DN-T1-GE3 range from high power conversion and switching, LED drives, motor controllers, and power supplies, to name a few. Thesish617DN-T1-GE3 can be used to control and switch power in a variety of devices. It is capable of switching up to 25A at a peak voltage of 45V making it ideal for use in high current applications. Thesish617DN-T1-GE3 has a low on-state resistance and efficient switching, providing low power dissipation and thus improved efficiency.

When used in an appropriate circuit, the Thesish617DN-T1-GE3 can be utilized to turn devices on and off. The most common use of this device is in a power supply, where the voltage and current through the load is switched as necessary by varying the gate voltage accordingly. Thesish617DN-T1-GE3 can also be used as a power switching device, enabling quick control over a large number of devices.

Thesish617DN-T1-GE3 requires only a small gate voltage to turn it on, thus allowing for a wide range of operating conditions. It has an increased current capacity of up to 25A, which makes it suitable for high-power applications.Thesish617DN-T1-GE3 also has a low on-state resistance and high-frequency operation, enabling efficient switching. Additionally, the device has a high maximum junction temperature rating of 85°C and offers improved thermal performance, providing low thermal dissipation and improved efficiency.

With its highly reliable performance and low on-state resistance, Thesish617DN-T1-GE3 makes a great choice for high-power applications. Its ability to switch currents in excess of 25A and 60V provide design flexibility and improved system efficiency. Its ability to switch high frequencies can be utilized in switching applications where high frequencies provide the capability of switching at lower power consumption. Additionally, due to its low RDS(ON) values and improved thermal performance, Thesish617DN-T1-GE3 is perfect for miniaturized designs.

The specific data is subject to PDF, and the above content is for reference