SIZ702DT-T1-GE3

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The SIZ702DT-T1-GE3 is a vertical Trench MOSFET Array that has been designed specifically to meet the requirements of the modern high-efficiency switching power supply market. It has been incorporated in various high-power supplies, especially those where high speed switching is required with low power dissipation. The general purpose vertical Trench MOSFET Array has been integrated with a source-drain voltage rating of 600V, ensuring high-voltage isolation. Furthermore, the SIZ702DT-T1-GE3 has been designed with a very low input capacitance of 4.0nF, allowing for high-speed switching.

The SIZ702DT-T1-GE3 features a number of characteristics that make it well-suited for a variety of applications. For starters, it has a low on-resistance of 4.0 mΩ and a low gate-source threshold voltage, allowing for low power dissipation even at high currents. Additionally, the device features excellent switching performance, allowing for high-speed switching with a minimum of power losses. Furthermore, the SIZ702DT-T1-GE3 has been designed with an input gate voltage of 5.0V, which allows the device to operate at frequencies of up to 40kHz.

In addition to its efficiency, the SIZ702DT-T1-GE3 also offers great thermal performance. The device has a maximum operating temperature of 125°C and a thermal resistance of 1.75 °C/W (junction to case). Moreover, it has an average power dissipation of 5.5W, making it an ideal choice for applications that require high power dissipation. The device also includes a number of other features such as a fast reverse recovery time, high electrostatic discharge protection and avalanche rating.

The SIZ702DT-T1-GE3 is well-suited for applications such as power supplies, welding machines, uninterruptible power supplies, and motors. Additionally, it can also be utilized in systems that require high-efficiency and high-speed switching. Due to its low on-resistance and low input gate voltage, the SIZ702DT-T1-GE3 is also well-suited for applications that require high-intensity switching with minimal power dissipation.

The SIZ702DT-T1-GE3 is constructed using a vertical Trench MOSFET Array. This type of device is manufactured using a process in which multiple layers of polysilicon are vacuum deposited on a silicon substrate and then etched to form the structure of the FETs (the channels of the MOSFETs). This process makes the vertical Trench MOSFET Array highly efficient, with a high current density and wide range of operating voltages.

The SIZ702DT-T1-GE3 utilizes the principle of avalanche breakdown. In this process, the circuit is placed in a high-voltage environment and the drain-source voltage is increased until the voltage reaches a certain threshold. At this point, electrons are “knocked out” of the gate-to-source junction, causing a sharp increase in the current flow. This process allows for a greater amount of current to flow through the circuit than would otherwise be possible.

The SIZ702DT-T1-GE3 is a highly efficient and reliable device. It has been designed to provide excellent high-speed switching performance and low power dissipation. Furthermore, its low on-resistance, low input gate voltage and high-voltage isolation makes it an ideal choice for a variety of applications.

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