SIZ790DT-T1-GE3

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The SIZ790DT-T1-GE3 is a general-purpose dual N-channel depletion-type field effect transistor (FET) array, designed for use in analogue switching applications. It is a monolithic integrated 8-channel N-channel FET/N-channel FET array. It is available in three different sizes: 2, 3 and 5. The package offers high-efficiency and high-frequency performance with a wide variety of switching challenges. The SIZ790DT-T1-GE3 features an innovative monolithic FET array design with a low-leakage logic level MOSFET design.

The SIZ790DT-T1-GE3 array consists of two N-channel FETs in a single package. Each FET is independently capable of switching at high speed and low power dissipation. The N-channel FETs are interconnected in series configuration to allow bidirectional AC as well as DC switching. The outputs of the N-channel FETs are combined in a source-follower configuration, to provide higher driving capability and improved efficiency. The source-follower configuration further reduces the power dissipation. Because of its combined inputs, the circuit can be used for dual two-level or three-level logic switching. The device can support a wide range of voltage supply, from 5.5V up to 40V.

The device is designed to handle inductive and capacitive switching load, with a fast switching speed of up to 300kHz. It has a minimum input voltage of 1.7V for logic switching and can reach a maximum rated continuous and peak drain-source on-state current of 3A and 15A, respectively. It is specified for operation over a temperature range of -40°C to +85°C. The device includes an integrated power supply filtering network, to minimize the effect of noise generated by the switching circuit, while providing a level of protection against transient events.

The SIZ790DT-T1-GE3 array can be used in a variety of applications that require high switching speed and low power consumption. It is an ideal solution for analog and digital switching applications in systems such as handheld and portable electronic devices, such as PDAs, cellular phones, and automotive audio systems. With its flexible design and high performance, the device is suitable for other applications such as industrial process control, home lighting control, temperature control, and motor speed control.

In terms of the working principle, the SIZ790DT-T1-GE3 is a basic FET switching array that is based on a field effect transistor (FET). A FET is a semiconductor device that consists of a semiconductor channel between two electrodes. When a voltage is applied to one of the electrodes, it modulates the flow of current through the device. In the case of the SIZ790DT-T1-GE3 device, the two FETs are connected in series, and thus both of the electrodes control the current flow through the device. This allows the devices to act as digital switches, with each FET controlling the flow of current in one direction only, providing the ability to modulate the current in both directions.

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