Allicdata Part #: | SIZ730DT-T1-GE3TR-ND |
Manufacturer Part#: |
SIZ730DT-T1-GE3 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET 2N-CH 30V 16A 6-POWERPAIR |
More Detail: | Mosfet Array 2 N-Channel (Half Bridge) 30V 16A, 35... |
DataSheet: | SIZ730DT-T1-GE3 Datasheet/PDF |
Quantity: | 3000 |
Vgs(th) (Max) @ Id: | 2.2V @ 250µA |
Base Part Number: | SIZ730 |
Supplier Device Package: | 6-PowerPair™ |
Package / Case: | 6-PowerPair™ |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power - Max: | 27W, 48W |
Input Capacitance (Ciss) (Max) @ Vds: | 830pF @ 15V |
Gate Charge (Qg) (Max) @ Vgs: | 24nC @ 10V |
Series: | TrenchFET® |
Rds On (Max) @ Id, Vgs: | 9.3 mOhm @ 15A, 10V |
Current - Continuous Drain (Id) @ 25°C: | 16A, 35A |
Drain to Source Voltage (Vdss): | 30V |
FET Feature: | Logic Level Gate |
FET Type: | 2 N-Channel (Half Bridge) |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The SIZ730DT-T1-GE3 is a transistor array module from Wurth Elektronik, specifically designed for applications requiring a dielectric withstanding voltage rating in excess of 350V. This particular model is a dual throw MOSFET, suitable for use in a wide range of applications, ranging from medical instrumentation to power management systems. It offers superior performance in terms of low conduction losses, high blocking voltage and up to 5 times the dielectric withstand rating of competing devices.
The SIZ730DT-T1-GE3 consists of two N-channel MOSFET transistors with integrated gate protection components. The transistors are designed using vertical channel metal oxide semiconductor (VCSO) technology, which allows them to operate at high voltages with low gate-source capacitance and reduced power dissipation. The integration of the protection components reduces the effect of external glitches, such as ESD and latch up. Additionally, the SIZ730DT-T1-GE3 features a low gate threshold voltage and gate charge, greatly improving its switching times. The low gate capacitance makes it especially suitable for applications requiring fast switching, such as power management circuits.
The SIZ730DT-T1-GE3 is an excellent choice for use in power management applications, such as in DC/DC converters or motor control. It can also be used in medical and automotive applications, as it offers high reliability due to its integrated protection components. The transistors can handle high input voltages and blocking voltages, making it suitable for use in buck, boost and inverting DC/DC converters. Additionally, the SIZ730DT-T1-GE3 also features low operating temperature, making it suitable for use in harsh environments.
The SIZ730DT-T1-GE3 is a versatile transistor array module offering superior performance for a wide range of applications. It offers excellent high voltage ratings, low gate capacitance, improved blocking capability and up to 5 times the dielectric withstand voltage of competing devices. Additionally, its integrated protection components provide reliable operation in a range of high power applications. The SIZ730DT-T1-GE3 is an ideal choice for use in power management circuits, medical instrumentation and automotive applications.
The specific data is subject to PDF, and the above content is for reference
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