SIZ728DT-T1-GE3

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The SIZ728DT-T1-GE3 is a dual N-channel RF Power MOSFET Array specifically designed for the mobile communications market. It is designed to provide excellent switching performance and serve as a power amplifier in mobile transmitters, making them suitable for both 2G and 3G network applications. The SIZ728DT-T1-GE3 is a high-performance RF power MOSFET array integrated with two N-channel MOSFETs in a single package.

As its name implies, the SIZ728DT-T1-GE3 is a transistor-based power amplifier, meaning it uses transistors to amplify the input electrical signal and transmit it to the output devices. These transistors are able to switch on quickly, allowing them to produce a high-quality and high-power output. The array consists of two MOSFETs in parallel, so it requires less total voltage than a single unit. This makes it a great choice for mobile devices, as it can reduce the overall power consumption and generate higher power efficiency.

The SIZ728DT-T1-GE3 has an excellent third-order intercept point (IP3) and input return loss, making it suitable for a wide range of applications. The array also provides a good power range and excellent RF OFF isolation, making it suitable for use in linear and mobile applications. Additionally, it has very low distortion, which is necessary for high-power applications.

The SIZ728DT-T1-GE3 utilizes a CMOS process, which helps to reduce several important power requirements such as power circuit components and power management. The array supports a voltage range of 3.2V to 6.5V and can deliver up to 80W of RF output power. Additionally, the higher junction temperature of the amplifier is able to limit the variation of gain over temperature.

The SIZ728DT-T1-GE3 is an ideal solution for mobile communication applications, as it is capable of providing excellent switching performance and good output power efficiency. The array supports a wide range of voltages and excellent RF OFF isolation, allowing it to be used in a variety of applications. It also has an excellent VO1 parameter and low distortion, which makes it suitable for high-power applications.

In summary, the SIZ728DT-T1-GE3 is a dual N-channel RF Power MOSFET Array designed specifically for mobile communication applications. The array has excellent switching performance and can provide a high-quality and high-power output. It has a wide voltage range and good RF OFF isolation, making it suitable for a wide range of applications. Additionally, the array has excellent IP3 and input return loss, as well as excellent VO1 and low distortion capabilities. All of these attributes make the SIZ728DT-T1-GE3 an ideal solution for mobile communication applications.

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