SIZ914DT-T1-GE3

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The SIZ914DT-T1-GE3 device is a field effect transistor array specifically designed for power management applications, such as high power switching, polarity switching and power level control. This power transistor array contains one high current N-channel enhancement mode MOSFET and two low threshold N-channel enhancement mode MOSFETs. The SIZ914DT-T1-GE3 transistor array can be used for various kinds of electronic switching circuits that require accurate voltage and current control.

Features

• High current: 250mA
• Low threshold voltage: 0.7V
• Polarity switching options
• Power level control

Application Fields

The SIZ914DT-T1-GE3 transistor array is commonly used in power management applications, such as high power switching, polarity switching, and power level control. Many of these applications require accurate voltage and current control that the SIZ914DT-T1-GE3 transistor array can provide.

The SIZ914DT-T1-GE3 transistor array can be used in automotive electronics, such as power windows, power seats, and headlights. It can also be used in PoE (Power over Ethernet) applications, such as VoIP phones and access points. Additionally, the SIZ914DT-T1-GE3 transistor array can be used in high current power switch applications, such as motor control.

Working Principle

The SIZ914DT-T1-GE3 transistor array is a three-terminal device. It consists of a gate (G), a drain (D) and a source (S). The gate is used to control the flow of current between the drain and the source. When the gate voltage is below the threshold voltage, the transistor is said to be in the off-state and no current will flow between the drain and the source. When the gate voltage is raised above the threshold voltage, the transistor is said to be in the on-state and current will flow between the drain and the source.

The SIZ914DT-T1-GE3 transistor array contains a single high current N-channel MOSFET and two low threshold N-channel MOSFETs. The high current MOSFET provides high power switching capability while the low threshold MOSFETs provide improved switching speed and lower switching losses. The SIZ914DT-T1-GE3 transistor array also features polarity switching and power level control functions.

Conclusion

The SIZ914DT-T1-GE3 is a powerful transitor array specifically designed for power management applications. It contains one high current N-channel MOSFET and two low threshold N-channel MOSFETs and provides a variety of capabilities including high power switching, polarity switching and power level control. The SIZ914DT-T1-GE3 transistor array can be used for various kinds of electronic switching circuits, providing accurate voltage and current control.

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