Allicdata Part #: | SIZ998DT-T1-GE3TR-ND |
Manufacturer Part#: |
SIZ998DT-T1-GE3 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET 2 N-CH 30V 8-POWERPAIR |
More Detail: | Mosfet Array 2 N-Channel (Dual), Schottky 30V 20A ... |
DataSheet: | SIZ998DT-T1-GE3 Datasheet/PDF |
Quantity: | 3000 |
Series: | TrenchFET® |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
FET Type: | 2 N-Channel (Dual), Schottky |
FET Feature: | Standard |
Drain to Source Voltage (Vdss): | 30V |
Current - Continuous Drain (Id) @ 25°C: | 20A (Tc), 60A (Tc) |
Rds On (Max) @ Id, Vgs: | 6.7 mOhm @ 15A, 10V, 2.8 mOhm @ 19A, 10V |
Vgs(th) (Max) @ Id: | 2.2V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 8.1nC @ 4.5V, 19.8nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds: | 930pF @ 15V, 2620pF @ 15V |
Power - Max: | 20.2W, 32.9W |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | 8-PowerWDFN |
Supplier Device Package: | 8-PowerPair® |
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The SIZ998DT-T1-GE3 is a unique electronic device that serves two main purposes. It is a small surface-mount transistor array, consisting of four N-type MOSFET transistors in an SOIC-16 package. It is typically used as a power switch, either to turn loads or motors on and off, or as a voltage regulator. This article will discuss the application field and working principle of the SIZ998DT-T1-GE3.
The SIZ998DT-T1-GE3 is primarily used as a power switch. In its most basic configuration, the device can be used to switch loads and motors on and off, as well as to provide voltage regulation. It is commonly used in a number of applications, like motor control, audio control, door openers, and computer peripherals. The voltage regulation comes from the MOSFET transistors, which vary their resistance depending on the voltage supplied to them, providing an accurate and consistent voltage output. The device can also be used for polarity switching, current limiting, and bi-level switching.
The SIZ998DT-T1-GE3 is also useful for power supply design and motor control applications. It is capable of providing a low-power and cost-effective solution for these applications, as it is well-suited to achieve fast and accurate voltage regulation with minimal power dissipation. Its integrated gate drive circuitry is capable of providing high peak currents and extended gate turn-on and turn-off times.
When it comes to the working principle of the SIZ998DT-T1-GE3, it is relatively simple. The device consists of four N-type MOSFETs in a single package, connected in an array. The transistors are connected in parallel so that they all share the same base voltage. When the base voltage is increased, the source of each of the transistors will also increase, which creates a "heat bridge" between the drain and the gate of the transistors. This allows for easy and accurate switching and allows for very precise voltage and current regulation.
The SIZ998DT-T1-GE3 is a versatile and cost-effective device that can be used in many different applications. Its compact size and low power consumption make it an attractive option for low-power and cost-sensitive applications. The integrated gate drive circuitry allows for precise and accurate switching, making it a great choice for motor control, door openers, audio control, and computer peripherals. Its efficient motor current control and low power consumption makes it an excellent choice for any application requiring reliable and fast voltage and current regulation.
The specific data is subject to PDF, and the above content is for reference
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