SIZ920DT-T1-GE3

Vgs(th) (Max) @ Id:	2.5V @ 250µA
Base Part Number:	SIZ920
Supplier Device Package:	8-PowerPair® (6x5)
Package / Case:	8-PowerWDFN
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 150°C (TJ)
Power - Max:	39W, 100W
Input Capacitance (Ciss) (Max) @ Vds:	1260pF @ 15V
Gate Charge (Qg) (Max) @ Vgs:	35nC @ 10V
Series:	TrenchFET®
Rds On (Max) @ Id, Vgs:	7.1 mOhm @ 18.9A, 10V
Current - Continuous Drain (Id) @ 25°C:	40A
Drain to Source Voltage (Vdss):	30V
FET Feature:	Standard
FET Type:	2 N-Channel (Half Bridge)
Part Status:	Obsolete
Packaging:	Tape & Reel (TR)

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The SIZ920DT-T1-GE3 is a P-channel Low-Voltage Metal-oxide-semiconductor Field-Effect Transistor (MOSFET) array that is typically used in advanced applications such as power management, power switches, and motor controllers. It\'s capable of constantly providing an efficient and reliable on/off switching operation. This type of transistor array will typically have a drain-to-source voltage (Vds) of 20V to 40V and a maximum drain-to-source current (Ids) of 2.1A.The MOSFETs used in the SIZ920DT-T1-GE3 array are designed to be highly reliable, with a lifetime expectancy of one million switching cycles. They are also designed to be lightweight and cost-efficient, making them an attractive option for a variety of applications.The MOSFET array works by using an electric field to control the current flow between the source and the drain. This type of transistor consists of two terminals: the source and the drain. When a positive voltage is applied to the source, a negative charge will be attracted and cause electrons to flow from the source to the drain. If a negative voltage is applied to the source, a positive charge will be attracted, which will cause the electrons to flow from the drain to the source. This is the principle of working for the MOSFET array.The SIZ920DT-T1-GE3 is also designed to be highly efficient, with a threshold voltage of 6V. This makes it ideal for applications where lower voltage operation is required. As a result, it can help to reduce the power usage in a variety of applications where higher currents or frequencies are required.The SIZ920DT-T1-GE3 is designed to be versatile and reliable, making it an ideal choice for a variety of applications. Its low voltage operation and efficient design make it suitable for battery-powered applications such as portable electronics, while its high current capabilities make it suitable for automotive and other industrial applications.The MOSFET array offers an efficient on/off switching solution that is both reliable and cost-effective. The array is designed for use in a wide range of applications, from low power to high current environments. In addition, the array offers an energy-efficient solution for powering devices, which helps reduce energy consumption in applications that require a large amount of electricity. The array is also designed to be lightweight and cost-effective, making it an attractive option for a variety of applications.

The specific data is subject to PDF, and the above content is for reference

Part Number	Manufacturer	Price	Quantity	Description