The SIZ918DT-T1-GE3 is a full featured RF power field effect transistor array with a channel count of 3 and a drain voltage of 60V. This array provides excellent microwave performance characteristics for multiple high gain linear and non-linear applications.

It is primarily used in many high speed and low noise amplifier systems. The SIZ918DT-T1-GE3’s unique process design allows for improved performance in linear and non-linear applications, while providing an impressive RF power output and a wide range of applications where power level stability and linearity are important.

The SIZ918DT-T1-GE3 provides high gain and excellent power output capability, along with excellent linearity. The wide frequency range and high gain also make it well suited for multiple broadcast applications including analog/digital communication systems and many high power RF/microwave systems. In addition, the array’s low noise figure capability is a valuable feature for many applications.

The SIZ918DT-T1-GE3 operates with a typical drain voltage rating of 60V and a maximum drain current of up to 20A. It is a three-stage RF amplifier array with an impressive 25 dB minimum gain and 17 dB maximum gain. The wide operating temperature range of -55 to +150°C allows the array to be used in most commercial, industrial, and military applications.

The SIZ918DT-T1-GE3 has two separate channels for cascading two identical arrays for increased linearity and gain. It also has a built-in distortion canceling circuit to minimize distortion from harmonic signals. The device’s inter-channel isolation of 45dB allows for isolation of antenna inputs from output signals, thus reducing cross-talk. The device also has a built-in output protection circuit to prevent burning out of the circuit in case of high input signal power.

The SIZ918DT-T1-GE3 works using the same technology as conventional MOSFET arrays but with a couple of key differences. Firstly, it takes a novel three-stage cascade, instead of the typical two-stage approach. This results in superior carrier suppression and linearity. Secondly, it incorporates on-chip thermistors to adjust the bias voltage of the power stages, and thus not requiring inconvenient bulky external biasing components.

In essence, the SIZ918DT-T1-GE3 is a highly efficient, reliable, and cost-effective RF amplifier array solution with a wide operating frequency range and a number of features and performance characteristics which are well suited to many high power RF/microwave application requirements. This makes the array an attractive choice for any RF/Microwave power amplifier design.

Thanks to its impressive high linearity, high gain capability, and low noise figure, the SIZ918DT-T1-GE3 is suitable for a wide variety of applications. These include, but are not limited to, high power broadcast systems, broadband signal amplification, high power microwave communication systems, and low noise amplifiers for PCS, GSM, and CDMA systems.