SK8603190L Discrete Semiconductor Products |
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Allicdata Part #: | P16271TR-ND |
Manufacturer Part#: |
SK8603190L |
Price: | $ 0.28 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Panasonic Electronic Components |
Short Description: | MOSFET N-CH 30V 12A 8HSO |
More Detail: | N-Channel 30V 12A (Ta), 19A (Tc) 2.7W (Ta), 19W (T... |
DataSheet: | SK8603190L Datasheet/PDF |
Quantity: | 1000 |
3000 +: | $ 0.25139 |
Vgs(th) (Max) @ Id: | 3V @ 1.01mA |
Package / Case: | 8-PowerSMD, Flat Leads |
Supplier Device Package: | HSO8-F4-B |
Mounting Type: | Surface Mount |
Operating Temperature: | 150°C (TJ) |
Power Dissipation (Max): | 2.7W (Ta), 19W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1092pF @ 10V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 6.3nC @ 4.5V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 10 mOhm @ 8A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 12A (Ta), 19A (Tc) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The SK8603190L is a single enhancement-mode field effect transistor (FET). It is fabricated using advanced high-voltage silicon gate CMOS technology, which ensures reliable operation over a wide range of operating temperature. Furthermore, it has a high breakdown voltage and is capable of switching high-currents with minimal loss.
The SK8603190L is primarily used in motor control applications such as robot arms, electric vehicles and robots. In these applications, the SK8603190L is used as a switch to control the direction and speed of the motor. The advantages of the SK8603190L over other transistors are its high thermal efficiency, low output voltage drop and high power density.
The working principle of the SK8603190L is based on the physical phenomenon of field-effect control. When a voltage is applied to the control electrode of the device, it affects the conductivity of a region of the semiconductor material known as the channel. Depending on the type of FET, this in turn affects the conduction of the source-drain current.
In the SK8603190L, this effect is used to control the magnitude of the source-drain current. When a positive voltage is applied to the gate electrode, the conductivity of the channel will increase, allowing more current to flow between the source and drain terminals. When the voltage is reduced, the conductivity of the channel decreases, reducing the source-drain current.
The main advantage of the SK8603190L over other transistors is its low gate drive voltage. The gate drive voltage is the voltage required to change the conductivity of the channel and is inversely proportional to the size of the channel. The smaller the channel, the lower the gate drive voltage and the higher the power density of the device. Furthermore, the gate drive voltage of the SK8603190L is a fraction of that of a bipolar transistor, allowing for more efficient control of the motor.
Overall, the SK8603190L is an ideal transistor for motor control applications due to its high thermal efficiency, low output voltage drop and high power density. Its low gate drive voltage also makes it an efficient way to control motors in high-speed applications.
The specific data is subject to PDF, and the above content is for reference
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