SLA5065 LF830

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The SLA5065 LF830 is a high-power and high-density, high-speed Power MOSFET array with an output stage consisting of three, closely similar, N-channel devices. This product is detailed specifically for use in high-current, high-power DC-DC switching buck and boost converters, providing both excellent performance and cost-effectiveness. This array is a single package device with an embedded N-channel MOSFET array and can provide up to 30% more power compared to a discrete MOSFET solution.

This Power MOSFET array consists of three independent power switches and each of them is separately controlled for independent applications. The integrated level-shift circuitry, gate drive layout and gate drill provides high-speed switching and excellent noise immunity, making it suitable for high-current, high-power switching applications.

The SLA5065 LF830 has a very low on-state resistance, RDS(ON), which enables it to switch very quickly, reducing the switching losses during transitions. Furthermore, its high-drain current capability is also attractive as it can be used in applications where high currents are required.

The device is built using innovative packaging technology, which allows it to employ a high-temperature, high-reliability package with a low number of pins and a reduced board size. This packaging technology also enables the device to perform with low thermal resistance and high power losses due to its ability to pass heat away from the chip to the heatsink.

In addition to the low package thermal resistance and low power losses, the SLA5065 LF830 also has an advanced body diode recovery time. This means that the device can be used for high-frequency, high-power switching applications where faster switching is required.

The device is designed for use in applications that require high-speed and high-power switching, such as DC-DC switching buck and boost converters. Its high-current and high-density capabilities also make it suitable for applications where high-power DC-DC switching is necessary, such as in power amplifiers, servers and telecommunications applications.

The SLA5065 LF830 works according to the principle of metal oxide semiconductor field effect transistors (MOSFETs) array. A metal oxide semiconductor (MOS) is the most common type of transistor used in modern digital and analogue circuit designs. In MOSFET array applications, the metal oxide semiconductor is a three-terminal device consisting of a source, gate and drain. The source is the point from which the current enters the device, the gate controls the current flow, and the drain is the point where the current exits out.

The SLA5065 LF830 uses transistors in a configuration to facilitate high-power and high-current switching in both buck and boost converter applications. The device uses three independent N-channel MOSFETs that are controlled separately and driven by a level shift circuitry to reduce the switching time. This makes it ideal for high-speed and high-power applications such as DC-DC switching buck and boost converters.

The SLA5065 LF830 is a high-power and high-density MOSFET array that is designed specifically for use in applications requiring higher power and current switching. It is a single package device with an embedded N-channel MOSFET array and can provide up to 30% more power compared to a discrete MOSFET solution. It has a very low on-state resistance, RDS(ON), which enables it to switch very quickly, reducing the switching losses during transitions. Furthermore, its high-drain current capability is also attractive as it can be used in applications where high currents are required. The advanced body diode recovery time makes it suitable for high-frequency, high-power switching applications where faster switching is needed.

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