SMB10J6.0A-E3/5B Allicdata Electronics
Allicdata Part #:

SMB10J6.0A-E3/5B-ND

Manufacturer Part#:

SMB10J6.0A-E3/5B

Price: $ 0.15
Product Category:

Circuit Protection

Manufacturer: Vishay Semiconductor Diodes Division
Short Description: TVS DIODE 6V 10.3V DO214AA
More Detail: N/A
DataSheet: SMB10J6.0A-E3/5B datasheetSMB10J6.0A-E3/5B Datasheet/PDF
Quantity: 1000
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
3200 +: $ 0.13062
Stock 1000Can Ship Immediately
$ 0.15
Specifications
Current - Peak Pulse (10/1000µs): 97.1A
Base Part Number: SMB10J
Supplier Device Package: DO-214AA (SMB)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Capacitance @ Frequency: --
Applications: General Purpose
Power Line Protection: No
Power - Peak Pulse: 1000W (1kW)
Series: TransZorb®
Voltage - Clamping (Max) @ Ipp: 10.3V
Voltage - Breakdown (Min): 6.67V
Voltage - Reverse Standoff (Typ): 6V
Unidirectional Channels: 1
Type: Zener
Moisture Sensitivity Level (MSL): --
Part Status: Active
Lead Free Status / RoHS Status: --
Packaging: Tape & Reel (TR) 
Description

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TVS diodes are an important branch of modern electronics related technologies, which mainly provide protection from transient voltage and overvoltage transients. This article introduces the application field and working principle of SMB10J6.0A-E3/5B.

SMB10J6.0A-E3/5B belongs to Multi-Stage TVS. It is an unidirectional device designed for medium speed and low power protection. It is mainly composed of Zener diode, avalanche diode, MOS transistor and other components. It provides overvoltage protection for analog and digital circuits, protecting them from surge damage. It is used in audio/video equipment, consumer electronics, computer peripherals, communication devices, automotive electronics, industrial equipment, instrumentation, and medical electronics.

When the reverse voltage is higher than the breakdown voltage (reverse stand-off voltage) of SMB10J6.0A-E3/5B, the moisture thin-film and Zener breakdown effect will determine the magnitude of the breakdown voltage of the device. At the same time, the voltage of the avalanche junction is generated, and the current will be restricted to the specified value. Therefore, the voltage on the other side of the device does not exceed the designed value, thus, protecting the connected device from overvoltage.

When the transient voltage is higher than the prescribed voltage, the device will be subjected to an abrupt voltage increase. The Zener diode will provide thermal protection current for the circuit. The avalanche diode will provide high surge capability, and the MOSFET will reduce the number of switching transitions. The MOSFET will also reduce the peak value of the surge, thereby suppressing the overvoltage damage to the downstream device.

After the reverse voltage, the device will be reset to the original state. In the process of reset, the temperature of the device increases, and overheating protection components are added in the circuit to prevent the device from being damaged by overheating. The device can withstand about 10 A of peak current.

The SMB10J6.0A-E3/5B provides excellent ESD protection and ensures a low clamping coefficient. It also has a wide operating temperature range and good protection performance. The device is approved by AEC-Q101 standard, so it is particularly suitable for the application in harsh environments.

In summary, the SMB10J6.0A-E3/5B is a highly efficient protection device designed to provide protection for circuits from a variety of transient voltage and overvoltage transients. It is reliable and easy to use, and its application covers a wide range of applications, such as consumer electronics, communication devices, automotive electronics, industrial equipment, instrumentation and medical electronics.

The specific data is subject to PDF, and the above content is for reference

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