Allicdata Part #: | SMB10J6.0A-E3/5B-ND |
Manufacturer Part#: |
SMB10J6.0A-E3/5B |
Price: | $ 0.15 |
Product Category: | Circuit Protection |
Manufacturer: | Vishay Semiconductor Diodes Division |
Short Description: | TVS DIODE 6V 10.3V DO214AA |
More Detail: | N/A |
DataSheet: | SMB10J6.0A-E3/5B Datasheet/PDF |
Quantity: | 1000 |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
3200 +: | $ 0.13062 |
Current - Peak Pulse (10/1000µs): | 97.1A |
Base Part Number: | SMB10J |
Supplier Device Package: | DO-214AA (SMB) |
Package / Case: | DO-214AA, SMB |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Capacitance @ Frequency: | -- |
Applications: | General Purpose |
Power Line Protection: | No |
Power - Peak Pulse: | 1000W (1kW) |
Series: | TransZorb® |
Voltage - Clamping (Max) @ Ipp: | 10.3V |
Voltage - Breakdown (Min): | 6.67V |
Voltage - Reverse Standoff (Typ): | 6V |
Unidirectional Channels: | 1 |
Type: | Zener |
Moisture Sensitivity Level (MSL): | -- |
Part Status: | Active |
Lead Free Status / RoHS Status: | -- |
Packaging: | Tape & Reel (TR) |
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TVS diodes are an important branch of modern electronics related technologies, which mainly provide protection from transient voltage and overvoltage transients. This article introduces the application field and working principle of SMB10J6.0A-E3/5B.
SMB10J6.0A-E3/5B belongs to Multi-Stage TVS. It is an unidirectional device designed for medium speed and low power protection. It is mainly composed of Zener diode, avalanche diode, MOS transistor and other components. It provides overvoltage protection for analog and digital circuits, protecting them from surge damage. It is used in audio/video equipment, consumer electronics, computer peripherals, communication devices, automotive electronics, industrial equipment, instrumentation, and medical electronics.
When the reverse voltage is higher than the breakdown voltage (reverse stand-off voltage) of SMB10J6.0A-E3/5B, the moisture thin-film and Zener breakdown effect will determine the magnitude of the breakdown voltage of the device. At the same time, the voltage of the avalanche junction is generated, and the current will be restricted to the specified value. Therefore, the voltage on the other side of the device does not exceed the designed value, thus, protecting the connected device from overvoltage.
When the transient voltage is higher than the prescribed voltage, the device will be subjected to an abrupt voltage increase. The Zener diode will provide thermal protection current for the circuit. The avalanche diode will provide high surge capability, and the MOSFET will reduce the number of switching transitions. The MOSFET will also reduce the peak value of the surge, thereby suppressing the overvoltage damage to the downstream device.
After the reverse voltage, the device will be reset to the original state. In the process of reset, the temperature of the device increases, and overheating protection components are added in the circuit to prevent the device from being damaged by overheating. The device can withstand about 10 A of peak current.
The SMB10J6.0A-E3/5B provides excellent ESD protection and ensures a low clamping coefficient. It also has a wide operating temperature range and good protection performance. The device is approved by AEC-Q101 standard, so it is particularly suitable for the application in harsh environments.
In summary, the SMB10J6.0A-E3/5B is a highly efficient protection device designed to provide protection for circuits from a variety of transient voltage and overvoltage transients. It is reliable and easy to use, and its application covers a wide range of applications, such as consumer electronics, communication devices, automotive electronics, industrial equipment, instrumentation and medical electronics.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
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SMB10J14A R5G | Taiwan Semic... | 0.15 $ | 850 | TVS DIODE 14V 23.2V DO214... |
SMB10J20A R5G | Taiwan Semic... | 0.15 $ | 850 | TVS DIODE 20V 32.4V DO214... |
SMB10J24A R5G | Taiwan Semic... | 0.15 $ | 850 | TVS DIODE 24V 38.9V DO214... |
SMB10J26A R5G | Taiwan Semic... | 0.15 $ | 850 | TVS DIODE 26V 42.1V DO214... |
SMB10J30A R5G | Taiwan Semic... | 0.15 $ | 850 | TVS DIODE 30V 48.4V DO214... |
SMB10J18A R5G | Taiwan Semic... | 0.15 $ | 850 | TVS DIODE 18V 29.2V DO214... |
SMB10J12A R5G | Taiwan Semic... | 0.15 $ | 850 | TVS DIODE 12V 19.9V DO214... |
SMB10J15A R5G | Taiwan Semic... | 0.15 $ | 850 | TVS DIODE 15V 24.4V DO214... |
SMB10J28A R5G | Taiwan Semic... | 0.15 $ | 850 | TVS DIODE 28V 45.4V DO214... |
SMB10J18AHR5G | Taiwan Semic... | 0.16 $ | 850 | TVS DIODE 18V 29.2V DO214... |
SMB10J22AHR5G | Taiwan Semic... | 0.16 $ | 850 | TVS DIODE 22V 35.5V DO214... |
SMB10J13AHR5G | Taiwan Semic... | 0.16 $ | 850 | TVS DIODE 13V 21.5V DO214... |
SMB10J12AHR5G | Taiwan Semic... | 0.16 $ | 850 | TVS DIODE 12V 19.9V DO214... |
SMB10J33AHR5G | Taiwan Semic... | 0.16 $ | 850 | TVS DIODE 33V 53.3V DO214... |
SMB10J28AHR5G | Taiwan Semic... | 0.16 $ | 850 | TVS DIODE 28V 45.4V DO214... |
SMB10J16AHR5G | Taiwan Semic... | 0.16 $ | 1000 | TVS DIODE 16V 26V DO214AA |
SMB10J10A M4G | Taiwan Semic... | 0.11 $ | 1000 | TVS DIODE 10V 17V DO214AA |
SMB10J11A M4G | Taiwan Semic... | 0.11 $ | 1000 | TVS DIODE 11V 18.2V DO214... |
SMB10J12A M4G | Taiwan Semic... | 0.11 $ | 1000 | TVS DIODE 12V 19.9V DO214... |
SMB10J13A M4G | Taiwan Semic... | 0.11 $ | 1000 | TVS DIODE 13V 21.5V DO214... |
SMB10J14A M4G | Taiwan Semic... | 0.11 $ | 1000 | TVS DIODE 14V 23.2V DO214... |
SMB10J15A M4G | Taiwan Semic... | 0.11 $ | 1000 | TVS DIODE 15V 24.4V DO214... |
SMB10J16A M4G | Taiwan Semic... | 0.11 $ | 1000 | TVS DIODE 16V 26V DO214AA |
SMB10J17A M4G | Taiwan Semic... | 0.11 $ | 1000 | TVS DIODE 17V 27.6V DO214... |
SMB10J18A M4G | Taiwan Semic... | 0.11 $ | 1000 | TVS DIODE 18V 29.2V DO214... |
SMB10J20A M4G | Taiwan Semic... | 0.11 $ | 1000 | TVS DIODE 20V 32.4V DO214... |
SMB10J22A M4G | Taiwan Semic... | 0.11 $ | 1000 | TVS DIODE 22V 35.5V DO214... |
SMB10J24A M4G | Taiwan Semic... | 0.11 $ | 1000 | TVS DIODE 24V 38.9V DO214... |
SMB10J26A M4G | Taiwan Semic... | 0.11 $ | 1000 | TVS DIODE 26V 42.1V DO214... |
SMB10J28A M4G | Taiwan Semic... | 0.11 $ | 1000 | TVS DIODE 28V 45.4V DO214... |
SMB10J30A M4G | Taiwan Semic... | 0.11 $ | 1000 | TVS DIODE 30V 48.4V DO214... |
SMB10J33A M4G | Taiwan Semic... | 0.11 $ | 1000 | TVS DIODE 33V 53.3V DO214... |
SMB10J36A M4G | Taiwan Semic... | 0.11 $ | 1000 | TVS DIODE 36V 58.1V DO214... |
SMB10J40A M4G | Taiwan Semic... | 0.11 $ | 1000 | TVS DIODE 40V 64.5V DO214... |
SMB10J9.0A M4G | Taiwan Semic... | 0.11 $ | 1000 | TVS DIODE 9V 15.4V DO214A... |
SMB10J10AHM4G | Taiwan Semic... | 0.13 $ | 1000 | TVS DIODE 10V 17V DO214AA |
SMB10J11AHM4G | Taiwan Semic... | 0.13 $ | 1000 | TVS DIODE 11V 18.2V DO214... |
SMB10J12AHM4G | Taiwan Semic... | 0.13 $ | 1000 | TVS DIODE 12V 19.9V DO214... |
SMB10J13AHM4G | Taiwan Semic... | 0.13 $ | 1000 | TVS DIODE 13V 21.5V DO214... |
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