SMCG5632E3/TR13 Allicdata Electronics
Allicdata Part #:

SMCG5632E3/TR13-ND

Manufacturer Part#:

SMCG5632E3/TR13

Price: $ 0.81
Product Category:

Circuit Protection

Manufacturer: Microsemi Corporation
Short Description: TVS DIODE 7.37V 13.8V DO215AB
More Detail: N/A
DataSheet: SMCG5632E3/TR13 datasheetSMCG5632E3/TR13 Datasheet/PDF
Quantity: 1000
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
3000 +: $ 0.73228
Stock 1000Can Ship Immediately
$ 0.81
Specifications
Current - Peak Pulse (10/1000µs): --
Base Part Number: SMCG5632
Supplier Device Package: DO-215AB (SMCG)
Package / Case: DO-215AB, SMC Gull Wing
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Capacitance @ Frequency: --
Applications: General Purpose
Power Line Protection: No
Power - Peak Pulse: 1500W (1.5kW)
Series: --
Voltage - Clamping (Max) @ Ipp: 13.8V
Voltage - Breakdown (Min): 8.19V
Voltage - Reverse Standoff (Typ): 7.37V
Unidirectional Channels: 1
Type: Zener
Moisture Sensitivity Level (MSL): --
Part Status: Active
Lead Free Status / RoHS Status: --
Packaging: Tape & Reel (TR) 
Description

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TVS (Transient Voltage Suppressor) - Diodes are electronic components that regulate large and sudden voltage spikes, and provide protection to active electronics and components. They are widely used in applications such as automotive systems, medical equipment, computers and consumer electronics. The SMCG5632E3/TR13 is an unidirectional TVS diode specifically designed for load change and reverse breakdown protection applications. It is based on an avalanche breakdown diode, which is surrounded by an N-channel MOSFET that acts as a gate for the device. Together, these two components form a protective device capable of absorbing ESD (electrostatic discharge) and transient voltages.

The SMCG5632E3/TR13 device is typically used in applications that require transient voltage suppression. These applications include automotive electronics, load switching, general-purpose ESD protection, and reverse breakdown protection. It is also used in non-automotive applications, such as medical equipment, computer systems, consumer electronics, and industrial electronics.

Due to its efficient design, the SMCG5632E3/TR13 provides maximum protection from transient voltages up to 18V and transient currents up to 2A. Its reverse breakdown voltage is rated at 17V, and its maximum working peak voltage is 13V. The maximum transient clamping voltage is 26V (at 1A). The diode has an operating junction temperature range of -55°C to +125°C and a storage temperature range of -55°C to +125°C.

The working principle of the SMCG5632E3/TR13 is simple and efficient. The diode consists of an N-channel MOSFET which acts as a gate for the device, and an avalanche breakdown diode. When a transient voltage or ESD event occurs, the gate of the MOSFET opens and the avalanche breakdown diode begins to conduct current. This causes the voltage across the diode to drop, and the current is redirected away from the sensitive components of the circuit.

Once the voltage spike or ESD event has been absorbed, the gate of the MOSFET closes again and the diode returns to its normal state. The transient voltage protection circuit will then remain inactive until the next transient voltage or ESD event occurs. This efficient and rapid operation is capable of absorbing high levels of power, which makes it ideal for protection against power surges, electrostatic discharge and other transient voltage events.

The SMCG5632E3/TR13 provides an effective and reliable way to protect circuits and components from the damaging effects of transient voltage and ESD events. Its efficient design enables it to absorb high levels of power, and its unidirectional nature allows it to provide protection in both load change and reverse breakdown applications. This makes it a great choice for a wide variety of applications, including automotive systems, medical equipment, computers, consumer electronics, and industrial electronics.

The specific data is subject to PDF, and the above content is for reference

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