SMDJ75C Allicdata Electronics
Allicdata Part #:

SMDJ75C-ND

Manufacturer Part#:

SMDJ75C

Price: $ 0.53
Product Category:

Circuit Protection

Manufacturer: Littelfuse Inc.
Short Description: TVS DIODE 75V 127.05V DO214AB
More Detail: N/A
DataSheet: SMDJ75C datasheetSMDJ75C Datasheet/PDF
Quantity: 1000
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
3000 +: $ 0.47741
Stock 1000Can Ship Immediately
$ 0.53
Specifications
Voltage - Clamping (Max) @ Ipp: 127.05V
Supplier Device Package: DO-214AB (SMCJ)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Capacitance @ Frequency: --
Applications: General Purpose
Power Line Protection: No
Power - Peak Pulse: 3000W (3kW)
Current - Peak Pulse (10/1000µs): 24.8A
Series: SMDJ
Voltage - Breakdown (Min): 78.93V
Voltage - Reverse Standoff (Typ): 75V
Bidirectional Channels: 1
Type: Zener
Moisture Sensitivity Level (MSL): --
Part Status: Active
Lead Free Status / RoHS Status: --
Packaging: Tape & Reel (TR) 
Description

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A Transient Voltage Suppression (TVS) diode, often called a "TransZorb," is a specialized electronic component used to protect against electrostatic discharge (ESD) and other fast transients.

The SMDJ75C is a surface mount TVS diode designed to clamp voltages that are above its voltage rating. Because the SMDJ75C is a surface mount device, it is designed to provide very low capacitance and very low clamping voltages so it can be used in high frequency signal lines.

The SMDJ75C is typically used in applications where high levels of ESD protection are needed. The diode is capable of suppressing ESD pulses of up to 30kV when properly placed on the PCB. The SMDJ75C is designed to be used in applications such as computers, telecommunication equipment, consumer electronics, data processing equipment and even automotive systems.

The working principle of the SMDJ75C is based on the avalanche breakdown effect of reverse bias p-n junction which enables a relatively low voltage (VBR) to be used in a high current (IC) reverse breakdown situation. Thus, when the voltage in the circuit rises above its rated value (VR), the diode begins to conduct and the voltage appears across the diode instead of the device that it is protecting. This prevents the device from incurring damage from overvoltage.

The SMDJ75C is designed to be used in voltage protector circuits, such as ESD protection for high speed digital interfaces. The SMDJ75C is designed with a low capacitance of 1pF and a low breakdown voltage of 5V. This low capacitance helps reduce interference with the signal and the low breakdown voltage prevents the voltage from going above the rated level.

In addition, the SMDJ75C incorporates a bidirectional circuit design which is capable of suppressing ESD pulses of up to 30kV. This makes it ideal for protecting sensitive electronic components from voltage spikes and other events.

The SMDJ75C is a relatively small component, which makes it ideal for space efficient designs. It can be easily soldered onto a PCB and is capable of providing efficient ESD protection for sensitive circuits.

In summary, the SMDJ75C is a specialized TVS diode designed to provide protection against ESD and other fast transients. The device features a low capacitance value and a low breakdown voltage, making it ideal for protecting high speed digital interfaces. The diode is also able to suppress ESD pulses of up to 30kV, ensuring that the device is not damaged by high voltage events. The SMDJ75C is also a small component, making it easy to solder onto a PCB and offering efficient ESD protection for sensitive circuits.

The specific data is subject to PDF, and the above content is for reference

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