SMF5V0A-E3-18

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

SMF5V0A-E3-18 belongs to the class of TVS - Diodes. It is a bidirectional unidirectional transistor designed to protect sensitive electronic components from electrical overstress. It is specifically designed for automotive electronic applications, and it can also operate as an ESD protection.

The SMF5V0A-E3-18 transistor is made of silicon under a metal-oxide-semiconductor technology. It has three pins, a source, a drain, and a gate. The gate is used to control the source-drain connection. It is an N-channel transistor, which means the drain-source current can flow when the gate voltage is more positive than the source voltage. The maximum allowable gate voltage is 3.3V, while the source voltage can be from -0.5V to +5.5V.

The working principle of the SMF5V0A-E3-18 is simple. When a voltage source is connected to the drain and the source, it creates a small current on the gate pin. When a voltage higher than the threshold voltage is applied to the gate pin, it turns on the transistor. This allows the current from the drain-source to flow in the forward direction. When the voltage on the gate is lower than the threshold voltage, the transistor turns off and the current from the drain-source does not flow.

The SMF5V0A-E3-18 is ideal for automotive applications due to its low power requirements and robust design. It can be used in a variety of applications, such as voltage regulation, current regulation, ESD protection, and overvoltage protection. It is also used in signal conditioning applications such as pulse shaping and waveform generation. Due to its low capacitance, it can also be used in high-frequency switching applications.

The SMF5V0A-E3-18 transistor is a versatile device which can be used in a variety of automotive applications. It is highly reliable due to its robust design and low power requirements. It provides excellent protection against overvoltage and electrostatic discharge without compromising the performance of the system components.

The specific data is subject to PDF, and the above content is for reference