SMF58AT1G Allicdata Electronics
Allicdata Part #:

SMF58AT1GOSTR-ND

Manufacturer Part#:

SMF58AT1G

Price: $ 0.00
Product Category:

Circuit Protection

Manufacturer: Littelfuse Inc.
Short Description: TVS DIODE 58V 93.6V SOD123FL
More Detail: N/A
DataSheet: SMF58AT1G datasheetSMF58AT1G Datasheet/PDF
Quantity: 1000
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Stock 1000Can Ship Immediately
Specifications
Series: SMF
Packaging: Tape & Reel (TR) 
Lead Free Status / RoHS Status: --
Part Status: Obsolete
Moisture Sensitivity Level (MSL): --
Type: Zener
Unidirectional Channels: 1
Voltage - Reverse Standoff (Typ): 58V
Voltage - Breakdown (Min): 64.4V
Voltage - Clamping (Max) @ Ipp: 93.6V
Current - Peak Pulse (10/1000µs): 2.1A
Power - Peak Pulse: 200W
Power Line Protection: No
Applications: Automotive
Capacitance @ Frequency: --
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOD-123F
Supplier Device Package: SOD-123FL
Base Part Number: SMF*A
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

TVS - Diodes are a type of device designed to protect a circuit from excessive voltage. The SMF58AT1G is a particular model of TVS - Diode designed for use in automotive ignition systems. In this article we will explore the application field and working principle of the SMF58AT1G.

Application Field

The SMF58AT1G is specifically designed to protect sensitive electronics in the automotive industry, where its application includes the prevention of electrostatic discharge (ESD) and electrical overstress (EOS) damage. It is typically used in ignition systems, as well as in control units, power supplies, and other sensitive electronic components.

Due to its robust design, the SMF58AT1G is also suitable for a wide variety of other applications, such as in medical electronics, avionics, and consumer electronics. In each of these fields, it can be used to help protect against the effects of ESD and EOS, as well as nuclear radiation exposure.

Working Principle

The SMF58AT1G model contains six discrete silicon avalanche diodes housed in a glass epoxy casing. The diode’s construction consists of a metal oxide semiconductor (MOS) gate, which serves as the gate electrode. When a sufficient voltage is applied to the gate, the diode will conduct a current. This current will then create an avalanche breakdown field, which is used to further accelerate the current.

The avalanche breakdown field will cause the diode to draw more and more current until either the current is reduced or the voltage increases to the diode’s avalanche voltage. At this point, the diode will be able to dissipate the excess voltage quickly and efficiently. This will limit any damaging current to a safe level, protecting the circuit from ESD and EOS.

Conclusion

The SMF58AT1G is a TVS - Diode designed for use in automotive ignition systems and other sensitive electronic components. It utilizes six discrete silicon avalanche diodes to protect circuits from ESD and EOS damage, as well as from nuclear radiation exposure. As such, it is a very useful and effective device for a wide range of applications.

The specific data is subject to PDF, and the above content is for reference

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