SMF58A-E3-08 Allicdata Electronics
Allicdata Part #:

SMF58A-E3-08-ND

Manufacturer Part#:

SMF58A-E3-08

Price: $ 0.06
Product Category:

Circuit Protection

Manufacturer: Vishay Semiconductor Diodes Division
Short Description: TVS DIODE 58V 95V DO219AB
More Detail: N/A
DataSheet: SMF58A-E3-08 datasheetSMF58A-E3-08 Datasheet/PDF
Quantity: 1000
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
30000 +: $ 0.05276
Stock 1000Can Ship Immediately
$ 0.06
Specifications
Voltage - Clamping (Max) @ Ipp: 95V
Supplier Device Package: SMF (DO-219AB)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C (TJ)
Capacitance @ Frequency: 144pF @ 1MHz
Applications: General Purpose
Power Line Protection: No
Power - Peak Pulse: 200W
Current - Peak Pulse (10/1000µs): 2.1A
Series: --
Voltage - Breakdown (Min): 64.4V
Voltage - Reverse Standoff (Typ): 58V
Unidirectional Channels: 1
Type: Zener
Moisture Sensitivity Level (MSL): --
Part Status: Active
Lead Free Status / RoHS Status: --
Packaging: Tape & Reel (TR) 
Description

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The SMF58A-E3-08 TVS diode is a widely used protection device for many electronic circuits. It is designed to absorb electrostatic discharge (ESD) and prevent electrostatic discharge damage to sensitive equipment. It is also designed to provide surge protection to a wide range of communication applications.

The SMF58A-E3-08 TVS diode comes in two varieties of architectures. The single-diode uni-directional and the quad-diode multi-directional. The uni-directional diode offers fast response times while the multi-directional diode is designed to provide simultaneous protection against both single and multi-level ESD threats. The diode features an ESD-protected guard ring structure intended to provide enhanced ESD protection with minimal capacitance and low leakage current. The SMF58A-E3-08 is designed to provide very low capacitance and highly reliable ESD protection up to 30 kV.

The SMF58A-E3-08 is a very versatile diode thanks to its wide selection of ratings. The diode\'s static breakdown voltage ranges from 6 V to 400 V (500 W) while its forward voltage drop ranges from 1.2 V to 3.5 V (500 mW). Its peak pulsed surge current rating ranges from 6 A to 600 A, depending on the rating required. The diode\'s leakage current also varies according to its rating.

The SMF58A-E3-08\'s working principle is based on a thyristor structure. Essentially, when a high voltage is applied to the anode side of the diode, the n-type semiconductor will become forward biased and allow current to pass from its anode to its cathode. The reverse breakdown voltage of the device is the voltage at which the diode\'s current flow is switched off. When the forward voltage reaches the device\'s reverse breakdown voltage, the anti-parallel diode connected in parallel to the main thyristor will switch on, allowing current to flow from the device\'s cathode to its anode.

The SMF58A-E3-08 is used in many electronic circuits and applications to protect against ESD, overvoltage, and power transients. It is commonly used in data and signal transmission lines, as well as automotive, computer, and consumer electronics. It is also found in telecommunications systems, medical devices, and in industrial instrumentation.

The SMF58A-E3-08 is a valuable component for protecting sensitive equipment from voltage and current surges. It is designed with a versatile thyristor structure that allows it to provide excellent ESD protection with minimal capacitance and leakage current. The device\'s wide assortment of ratings make it suitable for a variety of applications. As such, it is an indispensable part of many electronic circuits and applications.

The specific data is subject to PDF, and the above content is for reference

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