SN75477DG4 Allicdata Electronics
Allicdata Part #:

SN75477DG4-ND

Manufacturer Part#:

SN75477DG4

Price: $ 0.41
Product Category:

Integrated Circuits (ICs)

Manufacturer: Texas Instruments
Short Description: IC DUAL PERIPHERAL DRVR 8-SOIC
More Detail: Low-Side Gate Driver IC Non-Inverting 8-SOIC
DataSheet: SN75477DG4 datasheetSN75477DG4 Datasheet/PDF
Quantity: 1000
825 +: $ 0.37945
Stock 1000Can Ship Immediately
$ 0.41
Specifications
Logic Voltage - VIL, VIH: 0.8V, 2V
Base Part Number: SN75477
Supplier Device Package: 8-SOIC
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: 0°C ~ 70°C (TA)
Rise / Fall Time (Typ): 50ns, 90ns
Input Type: Non-Inverting
Current - Peak Output (Source, Sink): 500mA, 500mA
Series: --
Voltage - Supply: 4.5 V ~ 5.5 V
Gate Type: --
Number of Drivers: 2
Channel Type: Independent
Driven Configuration: Low-Side
Part Status: Active
Packaging: Tube 
Description

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PMIC - Gate Drivers generally refers to the integrated circuits designed to drive the gate connection of an external MOSFET which operates with high frequency. SN75477DG4 is one of the leading devices in the field, delivering high speed performance and excellent power levels. The device is capable of providing the necessary source and sink current to drive not only the internal MOSFETs but also the other base field-effect transistors (FETs) needed in the circuit.

The SN75477DG4 is mainly used in three types of applications. The first is enabling low-power, low-voltage circuit operations which require fast switching, such as DC-DC converters and motor control operations. Secondly, it is employed in High-power applications where maximum efficiency and robustness are essential, such as solar inverters and chargers. Thirdly, it is also applied in the core logic of microprocessors and memories requiring repetitive, high-speed and simple logic operations.

The working mechanism of the SN75477DG4 is quite simple, but it does include several interrelated sub-circuits and components. In its most basic form, the device contains an input gate and an output gate, the former providing the necessary control signal to the latter and the latter acting as the actual switch used to drive the external MOSFETs. In between the input and output gates, there are a number of other sub-circuits including level-shifters, voltage regulators, capacitors, and a charging gate.

The level-shifter circuit requires the input and output gate to be at different voltage levels in order to maintain a stable operation. This is accomplished by the voltage-regulation circuit, which ensures that the correct voltage is supplied across each of the gates involved. The charging gate is the third sub-circuit and it is responsible for controlling the charging of an input capacitor through the connection to the output gate. This capacitor is necessary for ensuring that the input capacitor can source enough current to fully charge the output gate.

The SN75477DG4 also includes several timing components within its design. The first is a start-up delay circuit which is used to ensure that the power-up sequence is initiated in a proper order. The second is a turn-on delay circuit which controls the amount of time that passes between the input and output gates being driven in order to ensure that the MOSFETs are correctly biased and that the threshold voltage is correctly set. The third is an output protection circuit which is essential in order to protect the MOSFETs against any possible overload.

Overall, the SN75477DG4 is an extremely powerful device for enabling the high-speed operation of external MOSFETs in various types of applications. Due to its several integrated circuits, it offers a high level of performance and reliability. The device utilizes several components and sub-circuits, like level-shifters, voltage regulators, capacitors, and charging gates, in order to ensure proper operation. Furthermore, its timing components ensure a robust and efficient layout design. As a result, the SN75477DG4 is an excellent choice for those looking for a high-performance and reliable gate driver for driving MOSFETs and other field-effect transistors.

The specific data is subject to PDF, and the above content is for reference

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