SN75477DRE4

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The SN75477DRE4 from Texas Instruments is a low-side dual channel switch specifically designed for off-state dv/dt noise immunity and high common-mode noise rejection. This device is suitable for power management integrated circuit (PMIC) - Gate Drivers applications in which high dv/dt immunity and low on-resistance are desired. The device is capable of blocking up to 18 V logic signals and is suitable for a wide range of applications, including motor control, IGBT protection circuits, and power MOSFET gate protection.

The SN75477DRE4 has two independent channels, each containing an integrated power MOSFET and a low-side drive circuit. Each channel is capable of carrying up to 1.5 A of current, and is designed to operate with logic levels of up to 18 V. The device offers a wide range of on-resistance values ranging from 20 mΩ to 600 mΩ and is capable of switching large signals up to 1 MHz. Additionally, the device includes a built-in thermal shutdown function, which is activated when the die temperature exceeds 170˚C.

The SN75477 is a dual, low-side power switch that provides high dv/dt immunity and common mode rejection for gate driver applications. The device includes two independent, internally-matched MOSFETs and supports a wide operating voltage range up to 18 V. The device is available in a thermally-enhanced, space-saving TSSOP package, making it ideal for applications requiring high performance in limited space. The device\'s low-noise, high-speed performance allows it to operate at high speeds up to 1 MHz and its built-in thermal shutdown function helps protect against excessive heat buildup in the device.

SN75477DRE4 Working Principle

The SN75477DRE4 consists of two independent low-side switching channels designed for use in power management integrated circuit (PMIC) - Gate Drivers applications. The basic principle of operation is that a voltage between 0 and 18 V is applied to the device\'s input, which causes the internal MOSFETs to turn on and allow current to flow in each channel. The device is capable of switching large signals up to 1 MHz and offers a wide range of on-resistance values. Additionally, the device includes a built-in thermal shutdown function, which is activated when the die temperature exceeds 170˚C.

The device is designed with an internally-matched MOSFET in each channel which allows the device to exhibit high dv/dt immunity and common-mode noise rejection. The device is also designed to offer a low on-resistance value across each channel, which is adjustable by changing the gate voltage. The device is capable of carrying up to 1.5 A of current, and is suitable for a wide range of applications, including motor control, IGBT protection circuits, and power MOSFET gate protection.

Conclusion

The SN75477DRE4 from Texas Instruments provides high dv/dt immunity and common-mode noise rejection for gate driver applications. The device is capable of blocking up to 18 V logic signals, has a wide range of on-resistance values ranging from 20 mΩ to 600 mΩ, and is capable of switching large signals up to 1 MHz. Additionally, the device includes a built-in thermal shutdown function, which is activated when the die temperature exceeds 170˚C. The device is available in a thermally-enhanced, space-saving TSSOP package, making it ideal for applications requiring high performance in limited space. For applications requiring high dv/dt immunity and low on-resistance, the SN75477DRE4 is an excellent choice.

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