SPA20N65C3XKSA1

Series:	CoolMOS™
Packaging:	Tube
Part Status:	Active
FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	650V
Current - Continuous Drain (Id) @ 25°C:	20.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On):	10V
Rds On (Max) @ Id, Vgs:	190 mOhm @ 13.1A, 10V
Vgs(th) (Max) @ Id:	3.9V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:	114nC @ 10V
Vgs (Max):	±20V
Input Capacitance (Ciss) (Max) @ Vds:	2400pF @ 25V
FET Feature:	--
Power Dissipation (Max):	34.5W (Tc)
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Through Hole
Supplier Device Package:	PG-TO220-3
Package / Case:	TO-220-3 Full Pack

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<p>The SPA20N65C3XKSA1 is a high efficiency N-Channel Mosfet designed for use in modern powerand logic switching applications. It has a high on-state current capacity, low on-state resistance, and low capacitance.</p><p>The N-channel MOSFET is a type of insulated gate bipolar transistor (IGBT) which combines a MOSFET with a bipolar transistor. It has a gate terminal between the source and drain which is connected to the gate insulator. This gate terminal is where the control voltage is applied, which allows a current to pass through or stop, depending on the voltage applied and the semiconductor material used.</p><p>The SPA20N65C3XKSA1 is an N-channel MOSFET with a maximum drain current of 20A and a maximum drain-source voltage of 650V. It also has a maximum power dissipation of 195W and a minimum drain-source on-state resistance of 65mΩ. The device also has a built-in fast body diode for applications where fast switching is needed. The body diode can help to reduce the switching losses associated with the MOSFET.</p><p>The SPA20N65C3XKSA1 MOSFET is designed for use in power and logic switching applications. Typical applications include motor control, power supplies, industrial automation, robotics, and power management applications. The device can be used in switching circuits such as H-bridges and half-bridge circuits, or used as a logic level switch in digital circuits.</p><p>The SPA20N65C3XKSA1 works on the basic principle of a MOSFET, wherein the gate terminal is used to control the flow of current between the source and drain terminals. When the gate voltage is higher than the threshold voltage, the device turns on and allows current to pass through. When the gate voltage is lower than the threshold voltage, the device turns off and does not allow current to pass.</p><p>In summary, the SPA20N65C3XKSA1 is a high-efficiency N-Channel MOSFET designed for use in power and logic switching applications. It has a high on-state current capacity, a low on-state resistance, and a low capacitance. It is ideal for use in switching circuits, motor control circuits, power supplies, and industrial automation applications. </p>

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