| Allicdata Part #: | SPB35N10T-ND |
| Manufacturer Part#: |
SPB35N10T |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Infineon Technologies |
| Short Description: | MOSFET N-CH 100V 35A D2PAK |
| More Detail: | N-Channel 100V 35A (Tc) 150W (Tc) Surface Mount PG... |
| DataSheet: |  SPB35N10T Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
| Vgs(th) (Max) @ Id: | 4V @ 83µA |
| Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Supplier Device Package: | PG-TO263-3-2 |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 175°C (TJ) |
| Power Dissipation (Max): | 150W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 1570pF @ 25V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 65nC @ 10V |
| Series: | SIPMOS® |
| Rds On (Max) @ Id, Vgs: | 44 mOhm @ 26.4A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 35A (Tc) |
| Drain to Source Voltage (Vdss): | 100V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Obsolete |
| Packaging: | Tape & Reel (TR) |
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The SPB35N10T is a surface-mounted N-channel power Metal Oxide Semiconductor Field Effect Transistor (MOSFET). It is a single power MOSFET, part of IRF\'s PowerMESH MOSFET family. This power MOSFET offers high switching power and enhanced performance capabilities. Other features include an intrinsically low on-state resistance, fast switching speed, a low Miller plateau voltage, and an ability to withstand heavy thermal loads.
The SPB35N10T is useful in many different applications. It can be used in industrial motor control, converter, deflection, and servo applications. It can also be used in automotive and aerospace applications, as well as in any application where power switching is necessary. This MOSFET is particularly suitable for automotive applications that involve electric fan motors, climate control fans and other high-current motors where space is limited.
The SPB35N10T features a TO-252-3L package. This package size is small and allows for the efficient and reliable use of this device in designs that have limited board space. It also has a high maximum lead temperature of up to 175°C, which makes it suitable for use in high-temperature environments.
The working principle of the SPB35N10T is very simple. The device is composed of two main components: a source and a drain. These two components are connected to the two gates of the MOSFET. When a voltage is applied to the gates, current flows between the two components, which allows the MOSFET to act like a switch. As long as the voltage is applied, the MOSFET will remain in its "on" state, and when no voltage is applied, the MOSFET will be in its "off" state.
The SPB35N10T is a great choice for any application that requires fast and reliable power switching. Its low on-state resistance, fast switching speed, and high maximum lead temperature makes this device ideal for high-power applications. With its small package size and ease of use, the SPB35N10T is quickly becoming the preferred choice of many engineers and designers.
The specific data is subject to PDF, and the above content is for reference
| Part Number | Manufacturer | Price | Quantity | Description |
|---|
| SPB35N10 | Infineon Tec... | -- | 1000 | MOSFET N-CH 100V 35A D2PA... |
| SPB35N10T | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 100V 35A D2PA... |
| SPB35N10 G | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 100V 35A D2PA... |
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