SPB47N10 Allicdata Electronics
Allicdata Part #:

SPB47N10-ND

Manufacturer Part#:

SPB47N10

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH 100V 47A D2PAK
More Detail: N-Channel 100V 47A (Tc) 175W (Tc) Surface Mount PG...
DataSheet: SPB47N10 datasheetSPB47N10 Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 4V @ 2mA
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: PG-TO263-3-2
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 175W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 2500pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 105nC @ 10V
Series: SIPMOS®
Rds On (Max) @ Id, Vgs: 33 mOhm @ 33A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR) 
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The SPB47N10 is a N-Channel enhancement-mode Field-Effect Transistor (FET) which belongs to the 500V/30A series of power MOSFETs produced by the Japanese manufacturer Sanken. It is designed to provide a reliable and stable switching solution in a variety of applications, including power conversion, lighting, motor control and audio amplification.

The advantage of using the SPB47N10 over the traditional bipolar transistors is its low on-state resistance and fast switching speed, which makes it well suited for high frequency switching applications where response times are critical. Furthermore, it has higher current and voltage ratings, so it is capable of driving heavier loads than most traditional transistors.

The SPB47N10 has a simple structure and working principle. The transistor consists of five regions: the source (S), the drain (D), the gate (G) and two body terminals. The source serves as the input and is where a voltage or current signal is applied. The output is taken from the drain, where a voltage or current signal is output. The gate is analogous to the base in bipolar transistors and is used to control the current flow through the channel by applying a voltage at the gate.

The operation of the transistor is based on the flow of electrons, which requires a change in the potential between the source and the drain. A small voltage at the gate can control the potential across the channel, allowing electrons to flow when the voltage at the gate is larger than the voltage at the source. This is known as “enhancement”, as it allows current to flow if the gate voltage is greater than the source voltage. By varying the gate voltage, the transistor can be used either as a switch or as an amplifier.

The SPB47N10 has several features that make it well suited for switching applications, such as its low capacitance and relatively low on-resistance. It also features a gate-to-drain charge cancellation system, which allows for high frequency operation. Additionally, the SPB47N10 is compatible with the TO-220 package, making it a good choice for power conversion, lighting and other high current applications.

The SPB47N10 is a powerful and reliable MOSFET transistor that is capable of providing high switching frequency, low on-resistance and high current ratings. It is well suited for a variety of applications, including power conversion, lighting, motor control and audio amplification. With its low capacitance, gate-to-drain charge cancellation system and compatibility with the TO-220 package, the SPB47N10 is an ideal choice for high frequency switching applications.

The specific data is subject to PDF, and the above content is for reference

Related Products
Search Part number : "SPB4" Included word is 5
Part Number Manufacturer Price Quantity Description
SPB42N03S2L-13 G Infineon Tec... 0.0 $ 1000 MOSFET N-CH 30V 42A D2PAK...
SPB42N03S2L13T Infineon Tec... 0.0 $ 1000 MOSFET N-CH 30V 42A D2PAK...
SPB47N10L Infineon Tec... -- 1000 MOSFET N-CH 100V 47A D2PA...
SPB47N10 Infineon Tec... -- 1000 MOSFET N-CH 100V 47A D2PA...
SPB42N03S2L-13 Infineon Tec... -- 1000 MOSFET N-CH 30V 42A D2PAK...
Latest Products
IRFL31N20D

MOSFET N-CH 200V 31A D2PAKN-Channel 200V...

IRFL31N20D Allicdata Electronics
IXTT440N055T2

MOSFET N-CH 55V 440A TO-268N-Channel 55V...

IXTT440N055T2 Allicdata Electronics
IXTH14N80

MOSFET N-CH 800V 14A TO-247N-Channel 800...

IXTH14N80 Allicdata Electronics
IXFT23N60Q

MOSFET N-CH 600V 23A TO-268(D3)N-Channel...

IXFT23N60Q Allicdata Electronics
IXTT72N20

MOSFET N-CH 200V 72A TO-268N-Channel 200...

IXTT72N20 Allicdata Electronics
IXFT9N80Q

MOSFET N-CH 800V 9A TO-268N-Channel 800V...

IXFT9N80Q Allicdata Electronics