SPD14N06S2-80 Allicdata Electronics
Allicdata Part #:

SPD14N06S2-80-ND

Manufacturer Part#:

SPD14N06S2-80

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH 55V 17A DPAK
More Detail: N-Channel 55V 17A (Tc) 30W (Tc) Surface Mount P-TO...
DataSheet: SPD14N06S2-80 datasheetSPD14N06S2-80 Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 4V @ 14µA
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: P-TO252-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 30W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 400pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V
Series: OptiMOS™
Rds On (Max) @ Id, Vgs: 80 mOhm @ 7A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Drain to Source Voltage (Vdss): 55V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR) 
Description

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SPD14N06S2-80 is a type of N-channel Field Effect Transistor (FET). It is also known as a power MOSFET and is one of the most common types of FETs used in electronic circuits.

In power electronics, FETs are widely used in DC/DC converters, AC motor controllers, lighting controls, motor drives and other power conditioning applications. MOSFETs in particular are the choice of device for these types of switches due to their very high switching speed and low on-state resistance. As such, SPD14N06S2-80 is a highly sought after device for high-power switching applications.

The SPD14N06S2-80 is a high-current N-channel enhancement-mode MOSFET with a drain-source voltage rating of 80 volts. It has a continuous drain current rating of 43A at a case temperature of 25°C and has a very low on-state resistance of 0.013 ohms. The device features a gate-source threshold voltage of 4.0V and is rated for an avalanche energy of 92mJ at a drain current of 22A.

The primary benefit of using the SPD14N06S2-80 FET is its low on-state resistance, which helps reduce dissipation losses and provide high efficiency in power circuits. Additionally, its high current handling capability makes it suitable for high-current switching applications. The device can be used either as an on/off switch or as a linear amplifier, depending on the circuit application.

The device works on the principals of a FET. A FET is a three-terminal device with a control terminal (gate) and two other terminals (source and drain) that allow electric current to flow between them. When a voltage is applied to the gate, it creates an electric field which alters the conductivity of the semiconductor material between the source and drain, allowing current to either flow (in an enhancement-mode FET like the SPD14N06S2-80) or stop flowing (in a depletion-mode FET). The degree of conductivity of the semiconductor material is determined by the amount of voltage applied to the gate terminal.

The SPD14N06S2-80 is also designed to withstand high temperatures up to 150°C and is capable of operating in extreme conditions. This makes it compatible with many industrial, automotive and aerospace applications where a temperature controlled environment cannot be guaranteed.

The SPD14N06S2-80 is a highly reliable and robust device which is suitable for a wide range of power switching applications. Its low on-state resistance and high current handling capability make it an ideal choice for power designers who require a reliable and efficient power switch. Furthermore, the device\'s ability to withstand extreme temperatures allows it to be used in industrial, automotive and aerospace applications.

The specific data is subject to PDF, and the above content is for reference

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