Allicdata Part #: | SPD11N10INTR-ND |
Manufacturer Part#: |
SPD11N10 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 100V 10.5A DPAK |
More Detail: | N-Channel 100V 10.5A (Tc) 50W (Tc) Surface Mount P... |
DataSheet: | SPD11N10 Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 4V @ 21µA |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package: | P-TO252-3 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 50W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 400pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 18.3nC @ 10V |
Series: | SIPMOS® |
Rds On (Max) @ Id, Vgs: | 170 mOhm @ 7.8A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 10.5A (Tc) |
Drain to Source Voltage (Vdss): | 100V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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The SPD11N10 is a power MOSFET manufactured by Infineon Technologies. It is a single power MOSFET with a wide drain-source voltage range of 18-100V, and a drain current rating of up to 25A. It is an advanced power MOSFET designed for use in various applications such as DC-DC conversion, motor control, and power supplies.
The SPD11N10 is constructed with a number of alternating layers of material, including the source (S), drain (D) and gate (G) terminals on the top and bottom of an N-doped silicon epitaxial layer. To ensure maximum reliability and performance, the device is fabricated using Infineon’s advanced shallow trench isolation (STI) process.
The basic working principle of the SPD11N10 is based on the capacitive coupling between the gate and the drain-source region, which modulates the resistance of the channel of the device. To turn on the device, a positive gate-source voltage is applied, which creates an inversion layer between the drain and the source. The device is turned off by applying a negative gate-source voltage, which depletes the inversion layer and reduces the electrical conductivity between the drain and source.
The SPD11N10 can be used in applications where high switching speed and low on-resistance are of paramount importance. For example, in DC-DC converters, the SPD11N10 can be used to quickly convert a given input voltage level to a desired output voltage level. In motor control and power supplies, the SPD11N10 can be used to control the speed and torque of an electric motor, or regulate the power delivery in an AC or DC power supply.
The SPD11N10 is also capable of a wide range of other applications, including power switches, synchronous rectifiers, switch mode power supplies (SMPS), and DC-AC conversion. The device also offers a number of advantages, such as low on-resistance, high efficiency, low switching losses, and low output capacitance.
The SPD11N10 is a highly reliable, advanced power MOSFET device suitable for a variety of applications, from DC-DC converters and motor control to power supplies and DC-AC conversion. Its wide drain-source voltage range, high current rating and low on-resistance make it an ideal choice for high-power and high-speed switching applications.
The specific data is subject to PDF, and the above content is for reference
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