Allicdata Part #: | SPP42N03S2L-13TIN-ND |
Manufacturer Part#: |
SPP42N03S2L13 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 30V 42A TO-220AB |
More Detail: | N-Channel 30V 42A (Tc) 83W (Tc) Through Hole PG-TO... |
DataSheet: | SPP42N03S2L13 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 2V @ 37µA |
Package / Case: | TO-220-3 |
Supplier Device Package: | PG-TO220-3-1 |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 83W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1130pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 30.5nC @ 10V |
Series: | OptiMOS™ |
Rds On (Max) @ Id, Vgs: | 12.9 mOhm @ 21A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 42A (Tc) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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The SPP42N03S2L13 is part of a class of transistors known as FETs, or Field Effect Transistors. FETs are a type of transistor that is used in a number of electronic applications, such as switching, amplifying, and voltage regulation. The SPP42N03S2L13 specifically is a single MOSFET transistor. MOSFETs are insulated gate field-effect transistors that use metal oxide semiconductor technology in order to greatly reduce power consumption compared to other types of transistors.
The SPP42N03S2L13 has multiple practical applications in the field of electronics. It is used mainly in applications where low power consumption and high precision control are desired. It is commonly used in power electronics, where it is used as a switch for controlling power flow. It can also be used in audio amplifiers and preamplifiers, and in sensitive analog circuitry to gain precision control of signals.
The SPP42N03S2L13 works on the principle of a Field-Effect Transistor, or FET. This type of transistor is an insulated gate field effect transistor, or IGFET, which operates on the principle of an electric field. The SPP42N03S2L13 uses a metal oxide semiconductor (MOS) integrated structure to control the conduction of electricity. In a MOSFET, a gate voltage is used to control the current flow. This gate voltage is applied to a metal oxide layer between the source and the drain. When the gate voltage is greater than the threshold voltage of the MOSFET, it acts as a closed switch and current flows. If the gate voltage is lower than the threshold voltage, the MOSFET acts as an open switch and current does not flow.
The SPP42N03S2L13 is a single MOSFET transistor, which means that it has one drain, one source, and one gate terminal. The source is the input, the drain is the output, and the gate is the control voltage. The SPP42N03S2L13 has a high power rating and is suitable for high speed switching applications. It can operate at a drain current of 3A and a drain-source voltage of 40V, which makes it suitable for applications in power electronics. The SPP42N03S2L13 has very low on-resistance and is suitable for applications in sensitive analog circuitry.
In conclusion, the SPP42N03S2L13 is a single MOSFET transistor that can be used for power electronics applications and for sensitive analog circuitry. It has a high power rating, low on-resistance, and can operate at high speeds. The SPP42N03S2L13 works on the principle of a Field-Effect Transistor and uses a metal oxide semiconductor layer to control the current flow. It is an ideal choice for applications where low power consumption and precision control are desired.
The specific data is subject to PDF, and the above content is for reference
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