SPU30N03S2-08 Allicdata Electronics
Allicdata Part #:

SPU30N03S2-08-ND

Manufacturer Part#:

SPU30N03S2-08

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH 30V 30A IPAK
More Detail: N-Channel 30V 30A (Tc) 125W (Tc) Through Hole P-TO...
DataSheet: SPU30N03S2-08 datasheetSPU30N03S2-08 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 4V @ 85µA
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Supplier Device Package: P-TO251-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 125W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 2170pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 47nC @ 10V
Series: OptiMOS™
Rds On (Max) @ Id, Vgs: 8.2 mOhm @ 30A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Discontinued at Digi-Key
Packaging: Tube 
Description

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SPU30N03S2-08 is a relatively new addition to the semiconductor family. It is a 60V N-channel enhancement mode MOSFET used in a variety of applications. It is designed in a small package with low on-state resistance, fast switching speed and low gate charge.

The SPU30N03S2-08 belongs to the transistors, FETs and MOSFETs category. It is a single-channel MOSFET, which means that it consists of a single MOSFET electrode, known as the source. The source and three other electrodes, the drain, gate and body, provide the necessary operating voltage between them. The gate voltage is used to control the current flow between the source and the drain. When the gate voltage is brought above the threshold voltage, the drain current flows.

The most commonly used applications of this device are in power electronics and motor control, since it is capable of transmitting large amounts of current with low resistance. It is also used in DC-DC converters for its fast switching capability, and for its low "on" resistance, thus providing an efficient power transfer. The SPU30N03S2-08 is also used in many audio amplifiers and loudspeakers.

Working principle of the SPU30N03S2-08 is based on the traditional MOSFET design. A gate voltage is applied to the gate electrode to form a conducting channel between the source and the drain. When the gate voltage is low, the MOSFET is in its "off" state and does not allow current to flow. If the gate voltage is increased, then the inversion layer under the gate electrode is created, thereby allowing a current to flow between the source and the drain.

It is important to note that the performance of the SPU30N03S2-08 depends on the gate voltage used. When the gate voltage is too low, the device will not operate properly and its current-carrying capability will be affected. On the other hand, if the gate voltage is too high, the device will become unstable and will suffer from an excessive amount of power dissipation.

In conclusion, the SPU30N03S2-08 is a versatile device that can be used in a wide range of applications. It is designed for low on-state resistance and fast switching, and is suitable for use in power electronics, motor control, and audio amplifiers and loudspeakers. The working principle is based on the traditional MOSFET design, and performance is dependent on the gate voltage used.

The specific data is subject to PDF, and the above content is for reference

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