| Allicdata Part #: | SPW07N60CFDFKSA1-ND |
| Manufacturer Part#: |
SPW07N60CFDFKSA1 |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Infineon Technologies |
| Short Description: | MOSFET N-CH 650V 6.6A TO-247 |
| More Detail: | N-Channel 650V 6.6A (Tc) 83W (Tc) Through Hole PG-... |
| DataSheet: |  SPW07N60CFDFKSA1 Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
| Technology: | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss): | 650V |
| Current - Continuous Drain (Id) @ 25°C: | 6.6A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Rds On (Max) @ Id, Vgs: | 700 mOhm @ 4.6A, 10V |
| Vgs(th) (Max) @ Id: | 5V @ 300µA |
| Gate Charge (Qg) (Max) @ Vgs: | 47nC @ 10V |
| Vgs (Max): | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds: | 790pF @ 25V |
| FET Feature: | -- |
| Power Dissipation (Max): | 83W (Tc) |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Mounting Type: | Through Hole |
| Supplier Device Package: | PG-TO247-3 |
| Package / Case: | TO-247-3 |
| Series: | CoolMOS™ |
| Packaging: | Tube |
| Part Status: | Obsolete |
| FET Type: | N-Channel |
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The SPW07N60CFDFKSA1 is a high voltage MOSFET transistor designed to provide excellent power handling, low thermal resistance, high withstand voltage and fast switching capability. The transistor, designed and developed by STMicroelectronics, is typical of the modern MOSFET transistor. In this article, we will discuss the application field and working principle of the SPW07N60CFDFKSA1.
The SPW07N60CFDFKSA1 is a high power MOSFET transistor suitable for use in a variety of applications, such as voltage conversion, power control and motor control. It is also well suited for use in AC/DC converters, solar inverters and high side current sensing applications. The transistor\'s low on-resistance allows for better switching efficiency and the device is able to handle large currents due to its low saturation voltage. The device\'s high levels of ESD protection ensure a long lifetime and reliable operation.
The working principle of the SPW07N60CFDFKSA1 is based on the principle of MOSFETs, or Metal Oxide Semiconductor Field Effect Transistors. The transistor is a three-terminal device, consisting of a gate, source and drain. The gate is used to control the current flow, while the source and drain are used to supply and sink the current, respectively. The transistor acts as a current switch, where the source and drain are connected to the power source, the voltage of which is used to control the transistor. When a small voltage is applied to the gate, the transistor is turned on and a current will flow through the circuit. When the voltage applied to the gate is removed, the transistor is turned off and the current will not flow.
The SPW07N60CFDFKSA1 is a high voltage MOSFET offering superior power handling, low thermal resistance, high withstand voltage and fast switching capabilities. With its low on-resistance, low saturation voltage and high levels of ESD protection, this transistor is an excellent choice for a variety of applications, such as voltage conversion, power control and motor control.
The specific data is subject to PDF, and the above content is for reference
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