Allicdata Part #: | SPW35N60CFDFKSA1-ND |
Manufacturer Part#: |
SPW35N60CFDFKSA1 |
Price: | $ 7.32 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 600V 34.1A TO-247 |
More Detail: | N-Channel 600V 34.1A (Tc) 313W (Tc) Through Hole P... |
DataSheet: | SPW35N60CFDFKSA1 Datasheet/PDF |
Quantity: | 1000 |
240 +: | $ 6.58747 |
Vgs(th) (Max) @ Id: | 5V @ 1.9mA |
Package / Case: | TO-247-3 |
Supplier Device Package: | PG-TO247-3 |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 313W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 5060pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 212nC @ 10V |
Series: | CoolMOS™ |
Rds On (Max) @ Id, Vgs: | 118 mOhm @ 21.6A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 34.1A (Tc) |
Drain to Source Voltage (Vdss): | 600V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Not For New Designs |
Packaging: | Tube |
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The SPW35N60CFDFKSA1 is a superseded model of fast IGBT module, with a current ranging from 600A to 1,200A. It is designed for both voltage and current control. This module has a variety of features and benefits that make it suitable for a wide range of applications, from industrial motor drives to high-intensity lighting systems. Furthermore, the SPW35N60CFDFKSA1 has low saturation voltage and fast switching speed, making it suitable for high-current applications.
The SPW35N60CFDFKSA1 is part of the Field Effect Transistor (FET) family, which consists of insulated gate-bipolar transistors (IGBTs), MOSFETs, and temperature sensors. It is a single MOSFET that is based on N-channel silicon. Its main feature is its low on-resistance which allows it to handle higher currents with less power loss. Additionally, the SPW35N60CFDFKSA1 has high current ripple tolerance, which makes it suitable for applications that involve fast switching speeds and large current variations.
The SPW35N60CFDFKSA1 is designed for applications such as DC-DC converters, wind power converters, motor drives, and power supplies. Its non-isolated off-line application makes it ideal for high-current applications such as motor drives and high-power lighting. Its fast switching speed allows it to minimize the power loss occurring in the electrical application, making it energy efficient and cost-effective. In addition, the high current ripple tolerance is beneficial in applications with higher power variations.
The working principle of the SPW35N60CFDFKSA1 is based on two main components. The first is a junction field-effect transistor (JFET) which is designed with a gate and channel connection. The channel connection allows the current to flow from the source to the drain, and the gate controls the flow of current through the channel. This is known as voltage control. The second component is the insulated gate-bipolar transistor (IGBT), which is designed with two gate and two drain connections. This type of device is used for current control; it allows the current to flow from the source to the drain when an appropriate amount of voltage is applied.
In conclusion, the SPW35N60CFDFKSA1 is a fast IGBT module, suitable for a variety of applications due to its low on-resistance, fast switching speed and high current ripple tolerance. It is based on N-channel silicon and has a variety of features and benefits that make it suitable for high-power applications such as DC-DC converters and wind power converters. Its working principle is based on the JFET and IGBT components, which allow it to control voltage or current. The SPW35N60CFDFKSA1 is an ideal choice for applications in which power-efficiency and cost-effectiveness are critical.
The specific data is subject to PDF, and the above content is for reference
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