SPW47N60C3FKSA1

Vgs(th) (Max) @ Id:	3.9V @ 2.7mA
Package / Case:	TO-247-3
Supplier Device Package:	PG-TO247-3
Mounting Type:	Through Hole
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	415W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	6800pF @ 25V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	320nC @ 10V
Series:	CoolMOS™
Rds On (Max) @ Id, Vgs:	70 mOhm @ 30A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	47A (Tc)
Drain to Source Voltage (Vdss):	650V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Not For New Designs
Packaging:	Tube

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What is SPW47N60C3FKSA1?

SPW47N60C3FKSA1 is a 600 Volt, 47A, N-channel MOSFET with excellent performance characteristics. It is fabricated in an advanced 3rd generation power MOSFET process, which includes features such as charge pumps, dual cell grounds and advanced cell structures. This makes the SPW47N60C3FKSA1 an ideal choice for switching applications that require low RDS(ON) and low gate charge.

Application Field and Working Principle of SPW47N60C3FKSA1

The SPW47N60C3FKSA1 is an N-Channel power MOSFET and can be used in a wide range of application areas. It is suitable for power conversion, DC-DC convertors, UPS & inverters, switching regulators, and high-side switches. It is also used for high power audio amplifiers, ground-coupled switching applications, and high-speed motor drive applications.The working principle behind the SPW47N60C3FKSA1 is that the device is composed of two terminals: the gate and the source. The MOSFET will not allow current to flow between the drain and source until a voltage is applied to the gate. The gate-source voltage (VGS) determines the value of current that is allowed to flow through the MOSFET. The drain-source voltage (VDS) determines the amount of current that is permitted to pass through the MOSFET.The main advantage of the SPW47N60C3FKSA1 is its low RDS(ON), which allows the device to operate at a lower voltage drop, leading to higher efficiency and improved power management in the application. The low gate charge of the SPW47N60C3FKSA1 is also beneficial for applications requiring fast switching speeds, as the gate charge affects switching speed.In addition to its excellent performance characteristics, the SPW47N60C3FKSA1 also features an enhanced thermal performance package with low body diode reverse recovery time. This ensures that the power dissipation across the device is kept to a minimum, thus ensuring a reliable and safe operation. The package also features a low thermal resistance, which improves the heat dissipation and enhances thermal performance.The SPW47N60C3FKSA1 is manufactured under an advanced, multi-stage process involving multiple test and burn-in stages to ensure a high level of quality. Every device is also subjected to a rigorous testing process, including parametric testing, voltage withstand testing, life testing, surge testing and device characterization.

Conclusion

In conclusion, the SPW47N60C3FKSA1 is an excellent choice for power conversion and switching applications. It offers excellent performance characteristics, including low gate charge and RDS(ON) as well as an enhanced thermal performance package with low junction-to-ambient thermal resistance and reverse-recovery times. It is constructed with an advanced, multi-stage process involving numerous tests and burn-in steps, and has been subject to a rigorous testing process to ensure a quality product.

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