Allicdata Part #: | SPW55N80C3FKSA1-ND |
Manufacturer Part#: |
SPW55N80C3FKSA1 |
Price: | $ 12.24 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 800V 54.9A TO-247 |
More Detail: | N-Channel 800V 54.9A (Tc) 500W (Tc) Through Hole P... |
DataSheet: | SPW55N80C3FKSA1 Datasheet/PDF |
Quantity: | 484 |
1 +: | $ 11.12580 |
10 +: | $ 10.11210 |
100 +: | $ 8.59544 |
Vgs(th) (Max) @ Id: | 3.9V @ 3.3mA |
Package / Case: | TO-247-3 |
Supplier Device Package: | PG-TO247-3 |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 500W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 7520pF @ 100V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 288nC @ 10V |
Series: | CoolMOS™ C3 |
Rds On (Max) @ Id, Vgs: | 85 mOhm @ 32.6A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 54.9A (Tc) |
Drain to Source Voltage (Vdss): | 800V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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SPW55N80C3FKSA1 (hereinafter referred to as SPW55N80C3FKSA1) is a wide band gap transistor, typically used in power electronic applications, such as inverters and rectifiers. The device is a n-type MOSFET transistor, with a fast switching speed and low losses that makes it ideal for high power applications and providing a more efficient power solution.
The SPW55N80C3FKSA1 is offered in a TO-220F package and features a number of advantages, such as a very low threshold voltage, making it one of the most efficient devices available in the market. It also boasts a superior gate charge performance, low capacitance and fast turn-on/off times, making it a preferred choice for high-quality power conversion.
The device features a drain-source voltage of 800V, as well as a maximum drain current of 55A. The device also offers a wide range of drain-source breakdown voltage, ranging from 6 to 400V. The high-temperature operation of the device is rated up to 175°C.
SPW55N80C3FKSA1 is designed primarily for power electronic applications, such as inverters, rectifiers and motor controllers. In addition, the device can be used in a range of other applications where fast switching and low heating is required. It is an efficient device for reducing energy losses in power supplies and motor controllers, where its low voltage capabilities allow for increased power density control.
The working principle of the device is based on its n-type MOSFET design. When a positive voltage is applied to the drain, a current path is formed between the source and drain, allowing the current to flow. As the voltage increases, the current flow increases and the device reaches the saturation point. At this stage, the increase in current flow is mainly due to the effect of the voltage drop across the drain-source junction.
In addition, the device\'s low threshold voltage allows for more efficient operation. When the voltage decreases, the device will begin to switch off, reducing the power loss. This makes the SPW55N80C3FKSA1 an efficient and reliable power electronic device.
In conclusion, the SPW55N80C3FKSA1 is a high-performance power electronic device, suitable for a range of applications where fast switching and low power losses are desired. The device features a wide range of advantages, such as low threshold voltage, high switching speed and low capacitance. These features make the device an ideal choice for applications where high efficiency and low power losses are required.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
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SPW55N80C3FKSA1 | Infineon Tec... | 12.24 $ | 484 | MOSFET N-CH 800V 54.9A TO... |
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