SQ4005EY-T1_GE3 Allicdata Electronics
Allicdata Part #:

SQ4005EY-T1_GE3-ND

Manufacturer Part#:

SQ4005EY-T1_GE3

Price: $ 0.29
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Siliconix
Short Description: MOSFET P-CHANNEL 12V 15A 8SOIC
More Detail: P-Channel 12V 15A (Tc) 6W (Tc) Surface Mount 8-SOI...
DataSheet: SQ4005EY-T1_GE3 datasheetSQ4005EY-T1_GE3 Datasheet/PDF
Quantity: 1000
2500 +: $ 0.26778
Stock 1000Can Ship Immediately
$ 0.29
Specifications
Vgs(th) (Max) @ Id: 1V @ 250µA
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 6W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 3600pF @ 6V
Vgs (Max): ±8V
Gate Charge (Qg) (Max) @ Vgs: 38nC @ 4.5V
Series: Automotive, AEC-Q101, TrenchFET®
Rds On (Max) @ Id, Vgs: 22 mOhm@ 13.5A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Drain to Source Voltage (Vdss): 12V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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The SQ4005EY-T1_GE3 MOSFET is a state-of-the-art component that can be used in many applications. This component is a single MOSFET (metal-oxide-semiconductor field effect transistor) that has the ability to control a large amount of current with very few external components. Its unique design and construction make it well suited for high power applications where high switching frequencies and low on-state losses are desired.

The SQ4005EY-T1_GE3 MOSFET has an insulated-gate field effect type of construction. It is fabricated using an advanced process that results in very low on-state losses and very low gate charge. This MOSFET is able to be used in many applications such as power supply systems, motor drives and power distribution systems.

The MOSFET can be used as either a switch or an amplifier. In the switching application, the gate voltage is used to turn the device on or off. A higher gate voltage will turn the device on, and a lower gate voltage will turn the device off. The on-state losses are much lower when compared to other components, such as bipolar transistors.

When being used as an amplifier, the MOSFET has the ability to amplify the input signal. This is done by changing the voltage applied to the gate. The higher the voltage, the more current is allowed to flow through the device. This allows the MOSFET to be used in a variety of amplifier applications.

The MOSFET can also be used as a voltage regulator. This is done by setting the gate at a certain voltage that does not allow current to flow through the device. By setting the gate voltage in this way, the voltage across the device can remain very stable. This is especially useful in applications where the voltage needs to be constant.

Overall, the SQ4005EY-T1_GE3 MOSFET offers a combination of features and benefits for a wide range of applications. It can offer very low on-state losses and excellent switching frequencies. It also offers easy integration into circuits, and adjustable voltage control. All of these features make the SQ4005EY-T1_GE3 MOSFET an excellent component for any application needing to control large amounts of current with minimal external components.

The specific data is subject to PDF, and the above content is for reference

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