SQ7002K-T1-GE3 Allicdata Electronics
Allicdata Part #:

SQ7002K-T1-GE3-ND

Manufacturer Part#:

SQ7002K-T1-GE3

Price: $ 0.19
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Siliconix
Short Description: MOSFET N-CH 60V 320MA SOT23-3
More Detail: N-Channel 60V 320mA (Tc) 500mW (Tc) Surface Mount ...
DataSheet: SQ7002K-T1-GE3 datasheetSQ7002K-T1-GE3 Datasheet/PDF
Quantity: 1000
3000 +: $ 0.16808
Stock 1000Can Ship Immediately
$ 0.19
Specifications
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3 (TO-236)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 500mW (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 24pF @ 30V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 1.4nC @ 4.5V
Series: TrenchFET®
Rds On (Max) @ Id, Vgs: 1.3 Ohm @ 500mA, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 320mA (Tc)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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The SQ7002K-T1-GE3 is a MOSFET (metal-oxide-semiconductor field-effect transistor) contained in a single-package TO-263, which is one of the most widely-used SMD packages, to ensure efficient power conversion. It is suitable for high-side, low-side and complementary driver applications, such as high-side or low-side switches and DC-DC converters. In addition to its efficient package, the SQ7002K-T1-GE3 also offers high reliability and high-speed switching performance.

The SQ7002K-T1-GE3 has a drain-source voltage rating of 200V and a drain current of 8.5A at 25°C. Its maximum power dissipation ratings are 14W at TA=25°C and 16W at TC=50°C. It also has a low on-state resistance of 21mΩ, which ensures a low power loss when the device is in an conducting state. The device is rated for a maximum junction temperature of 125°C.

The working principle of the SQ7002K-T1-GE3 involves the application of an external gate-source voltage, which causes a majority of charge carriers to accumulate near the gate-source interface. This accumulation of charge carriers results in an inversion layer around the gate-source interface, creating a conducting channel between the drain and source terminals. When the gate-source voltage is increased, the majority of charge carriers increase, resulting in a increase in the current flow between the drain and source terminals. When the gate-source voltage is reduced, the majority of charge carriers decreases, resulting in decrease the current flow between the drain and source terminals.

SQ7002K-T1-GE3s are used in a variety of applications, such as high-side, low-side and complementary driver applications, such as high-side or low-side switches and DC-DC converters. It can also be used in motor control, such as brushless DC motor, variable frequency motor or stepper motor control, and is ideal for LED lighting applications. Its high-speed switching capability makes it suitable for low-power power conversion and high-power inverter systems, making it an ideal choice for industrial, automotive and consumer electronics applications.

In conclusion, the SQ7002K-T1-GE3 is a MOSFET device that offers higher reliability and high-speed switching performance in a single package. Its features and functionalities make it suitable for a variety of applications, ranging from low-power power conversion to high-power inverters. Additionally, its low on-state resistance ensures low power loss when the device is in an conducting state, making it an ideal choice for LED lighting, motor control and industrial applications.

The specific data is subject to PDF, and the above content is for reference

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