
Allicdata Part #: | SQ7002K-T1-GE3-ND |
Manufacturer Part#: |
SQ7002K-T1-GE3 |
Price: | $ 0.19 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET N-CH 60V 320MA SOT23-3 |
More Detail: | N-Channel 60V 320mA (Tc) 500mW (Tc) Surface Mount ... |
DataSheet: | ![]() |
Quantity: | 1000 |
3000 +: | $ 0.16808 |
Vgs(th) (Max) @ Id: | 2.5V @ 250µA |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: | SOT-23-3 (TO-236) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 500mW (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 24pF @ 30V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 1.4nC @ 4.5V |
Series: | TrenchFET® |
Rds On (Max) @ Id, Vgs: | 1.3 Ohm @ 500mA, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 320mA (Tc) |
Drain to Source Voltage (Vdss): | 60V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The SQ7002K-T1-GE3 is a MOSFET (metal-oxide-semiconductor field-effect transistor) contained in a single-package TO-263, which is one of the most widely-used SMD packages, to ensure efficient power conversion. It is suitable for high-side, low-side and complementary driver applications, such as high-side or low-side switches and DC-DC converters. In addition to its efficient package, the SQ7002K-T1-GE3 also offers high reliability and high-speed switching performance.
The SQ7002K-T1-GE3 has a drain-source voltage rating of 200V and a drain current of 8.5A at 25°C. Its maximum power dissipation ratings are 14W at TA=25°C and 16W at TC=50°C. It also has a low on-state resistance of 21mΩ, which ensures a low power loss when the device is in an conducting state. The device is rated for a maximum junction temperature of 125°C.
The working principle of the SQ7002K-T1-GE3 involves the application of an external gate-source voltage, which causes a majority of charge carriers to accumulate near the gate-source interface. This accumulation of charge carriers results in an inversion layer around the gate-source interface, creating a conducting channel between the drain and source terminals. When the gate-source voltage is increased, the majority of charge carriers increase, resulting in a increase in the current flow between the drain and source terminals. When the gate-source voltage is reduced, the majority of charge carriers decreases, resulting in decrease the current flow between the drain and source terminals.
SQ7002K-T1-GE3s are used in a variety of applications, such as high-side, low-side and complementary driver applications, such as high-side or low-side switches and DC-DC converters. It can also be used in motor control, such as brushless DC motor, variable frequency motor or stepper motor control, and is ideal for LED lighting applications. Its high-speed switching capability makes it suitable for low-power power conversion and high-power inverter systems, making it an ideal choice for industrial, automotive and consumer electronics applications.
In conclusion, the SQ7002K-T1-GE3 is a MOSFET device that offers higher reliability and high-speed switching performance in a single package. Its features and functionalities make it suitable for a variety of applications, ranging from low-power power conversion to high-power inverters. Additionally, its low on-state resistance ensures low power loss when the device is in an conducting state, making it an ideal choice for LED lighting, motor control and industrial applications.
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Part Number | Manufacturer | Price | Quantity | Description |
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SQ7002K-T1-GE3 | Vishay Silic... | 0.19 $ | 1000 | MOSFET N-CH 60V 320MA SOT... |
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