| Allicdata Part #: | SQ7415AEN-T1_GE3TR-ND |
| Manufacturer Part#: |
SQ7415AEN-T1_GE3 |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Vishay Siliconix |
| Short Description: | MOSFET P-CH 60V 16A 1212-8 |
| More Detail: | P-Channel 60V 16A (Tc) 53W (Tc) Surface Mount Powe... |
| DataSheet: |  SQ7415AEN-T1_GE3 Datasheet/PDF |
| Quantity: | 1000 |
| Vgs(th) (Max) @ Id: | 2.5V @ 250µA |
| Package / Case: | PowerPAK® 1212-8 |
| Supplier Device Package: | PowerPAK® 1212-8 |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 175°C (TJ) |
| Power Dissipation (Max): | 53W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 1385pF @ 25V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 38nC @ 10V |
| Series: | TrenchFET® |
| Rds On (Max) @ Id, Vgs: | 65 mOhm @ 5.7A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
| Current - Continuous Drain (Id) @ 25°C: | 16A (Tc) |
| Drain to Source Voltage (Vdss): | 60V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | P-Channel |
| Part Status: | Active |
| Packaging: | Tape & Reel (TR) |
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SQ7415AEN-T1_GE3 is a 300V N-channel enhancement-mode Field-Effect Transistor (FET) designed for high-speed switching and low-voltage applications. It can be used in non-isolated, constant voltage applications such as telecom, automotive, computer and consumer electronics. It features a low ON-resistance and low input capacitance making it suitable for high-frequency, high-speed switching applications. The device is also available in a surface-mount package.
Features
- Designed to meet requirements of UL-6- No. E218026
- 300V, 0.25A Continuous Source-Drain Voltage and Current
- Low On-State Resistance
- Low Input/Output Capacitance
- Chooseable Drain-Source Voltage (VDS)
- MOSFETs with Similar Electrical Characteristics Available
- Surface Mount Capability
Applications
- Telecom, Automotive and Computer Applications
- High-Frequency, High-Speed Switching Applications
- Switchmode Power Supplies
- Low Voltage/Low Current Applications
- Constant Voltage Supply and Regulating Applications
- DC to DC Converter and DC to AC Inverter Applications
Working Principle
The SQ7415AEN-T1_GE3 is a type of field-effect transistor (FET). FETs are a type of transistor which works by controlling the electrical current flow between two terminals, called the source and the drain. It uses an electric field, generated by a voltage applied to a control p-n junction (the gate), to control the electrical properties of the channel between the source and drain. The voltage applied to the gate can control the conductivity of the channel, which is the amount of current able to travel through the channel.
In the SQ7415AEN-T1_GE3, the N-channel is controlled by the electric field generated between the p-type layer in the gate and the n-type semiconductor regions in the source and drain. The threshold voltage (Vth) is the minimum required voltage to make the FET conduct. The ON-resistance is the resistance seen across the channel when voltage is applied to the gate with a bias between the source and the drain.
The SQ7415AEN-T1_GE3 has a low on-state resistance and low input capacitance making it suitable for high-frequency and high-speed switching applications. It also has a low threshold voltage and can be used in non-isolated, constant voltage applications.
Conclusion
The SQ7415AEN-T1_GE3 is a 300V N-channel enhancement-mode Field-Effect Transistor (FET) designed for high-speed switching and low-voltage applications. It features a low ON-resistance and low input capacitance, making it suitable for high-frequency, high-speed switching applications. The device is also available in a surface-mount package, and can be used in a variety of telecom, automotive, computer and consumer electronics applications.
The specific data is subject to PDF, and the above content is for reference
| Part Number | Manufacturer | Price | Quantity | Description |
|---|
| SQ7415AEN-T1_GE3 | Vishay Silic... | -- | 1000 | MOSFET P-CH 60V 16A 1212-... |
| SQ7414AENW-T1_GE3 | Vishay Silic... | 0.28 $ | 1000 | MOSFET N-CH 60V 18A POWER... |
| SQ7414AEN-T1_GE3 | Vishay Silic... | -- | 9000 | MOSFET N-CH 60V 5.6A PPAK... |
| SQ7415AENW-T1_GE3 | Vishay Silic... | -- | 6000 | MOSFET P-CH 60V 16A POWER... |
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