
Allicdata Part #: | SQD07N25-350H_GE3-ND |
Manufacturer Part#: |
SQD07N25-350H_GE3 |
Price: | $ 0.48 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET N-CH 250V 7A TO252AA |
More Detail: | N-Channel 250V 7A (Tc) 71W (Tc) Surface Mount TO-2... |
DataSheet: | ![]() |
Quantity: | 1000 |
2000 +: | $ 0.43818 |
Vgs(th) (Max) @ Id: | 3.5V @ 250µA |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package: | TO-252AA |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 71W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1205pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 29nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 350 mOhm @ 10A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 7A (Tc) |
Drain to Source Voltage (Vdss): | 250V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The SQD07N25-350H_GE3 is a MOSFET (Metal–Oxide–Semiconductor Field-Effect Transistor) that is unique in its design and its applications. It is a single device that has been designed for high performance, high voltage and power applications. The SQD07N25-350H_GE3 was designed to perform as both a switch and an amplifier in order to provide the best possible performance in a wide variety of applications. This article will discuss the application field and working principle of the SQD07N25-350H_GE3.
The SQD07N25-350H_GE3 is a high-voltage, high-current, very-high-frequency MOSFET. It has been designed with the highest voltage handling capabilities, in order to be widely used in automotive and industrial applications. For example, the SQD07N25-350H_GE3 can be used in applications such as motor drivers and inverters, as well as power conditioning applications. The device has an impressive maximum operating voltage of 30V, and a maximum operating temperature of 200°C.
The working principle of the SQD07N25-350H_GE3 is based on the construction of the MOSFET, which consists of three terminals; the gate, the source, and the drain. The gate terminal is used to regulate the flow of electric current from the source to the drain. This is done by applying a small voltage to the gate that creates an electric field that repels electrons from the surface of the gate. As the gate voltage is increased, more electrons are repelled from the gate and the current flow from the source to the drain is decreased. Conversely, as the gate voltage is decreased, fewer electrons are repelled from the gate and the current flow from the source to the drain is increased.
The SQD07N25-350H_GE3 is an excellent choice for a wide variety of applications due to its superior electrical parameters. It has an input capacitance of 16.5pF and a maximum drain current of 350mA. It also has low on-resistance and low gate-source capacitance, resulting in stable performance in high frequency applications. The device is also highly efficient, which helps reduce power consumption in applications such as motor drivers, inverters, and power conditioning.
In summary, the SQD07N25-350H_GE3 is a unique single device MOSFET that has been designed for high performance and high voltage applications. It has an impressive maximum operating voltage of 30V, and a maximum current handling capacity of 350mA. The device works on the principle of manipulating the electric field around the gate to control the flow of current from the source to the drain. It also has excellent electrical parameters including low on-resistance and low gate-source capacitance, making it ideal for high-frequency applications. The SQD07N25-350H_GE3 is a great choice for automotive, industrial and power conditioning applications.
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Part Number | Manufacturer | Price | Quantity | Description |
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SQD07N25-350H_GE3 | Vishay Silic... | 0.48 $ | 1000 | MOSFET N-CH 250V 7A TO252... |
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