SQD25N15-52_GE3 Allicdata Electronics
Allicdata Part #:

SQD25N15-52_GE3TR-ND

Manufacturer Part#:

SQD25N15-52_GE3

Price: $ 1.34
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Siliconix
Short Description: MOSFET N-CH 150V 25A TO252
More Detail: N-Channel 150V 25A (Tc) 107W (Tc) Surface Mount TO...
DataSheet: SQD25N15-52_GE3 datasheetSQD25N15-52_GE3 Datasheet/PDF
Quantity: 8000
1 +: $ 1.34000
10 +: $ 1.29980
100 +: $ 1.27300
1000 +: $ 1.24620
10000 +: $ 1.20600
Stock 8000Can Ship Immediately
$ 1.34
Specifications
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: TO-252, (D-Pak)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 107W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 2200pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 51nC @ 10V
Series: Automotive, AEC-Q101, TrenchFET®
Rds On (Max) @ Id, Vgs: 52 mOhm @ 15A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Drain to Source Voltage (Vdss): 150V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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SQD25N15-52_GE3 is a single MOSFET from NXP Semiconductor. It is a dual power MOSFET with a maximum drain current of 25A, drain source voltage of 30V and gate source voltage of up to ±20V. It is a surface mount transistor and available in the TO-252 package. The MOSFET has a low total gate charge and low input capacitance, and provides excellent power handling performance.

The SQD25N15-52_GE3 application field are wide and varies depending on the design parameters such as gate to source voltage, current, power and temperature. Typical applications include automotive automotive battery protection, power management in consumer electronic products, and power conversion in high power applications such as lighting, audio, and communications. The MOSFET can also be used in motor control, server and storage, solar power and industrial automation.

The working principle of the SQD25N15-52_GE3 is based on the concept of power MOSFETs. A power MOSFET is a metal-oxide-semiconductor field effect transistor (MOSFET) that is used for high-power switching applications. Its low on-resistance combined with fast switching speeds makes it ideal for a wide range of applications. power MOSFETs are available in both unipolar (enhancement mode) and bipolar (depletion mode).

When the gate voltage is applied, a channel is formed between the source and drain. This channelconducts only electrons, leading to a depletion of current. When the gate voltage is increased, the channel widens and more current can flow through it. In the SQD25N15-52_GE3, the voltage applied to the gate is between -20V and +20V and the drain can support up to 25A of current.

The SQD25N15-52_GE3 is an ideal choice for a wide range of applications due to its low on-resistance, fast switching speeds and robust design. It is available in a very compact package and is available from a wide range of suppliers. It is an excellent choice for voltage regulated systems, battery protection, motor control, lighting, and communication devices.

The specific data is subject to PDF, and the above content is for reference

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