SQJ500AEP-T1_GE3 Allicdata Electronics
Allicdata Part #:

SQJ500AEP-T1_GE3TR-ND

Manufacturer Part#:

SQJ500AEP-T1_GE3

Price: $ 0.43
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Siliconix
Short Description: MOSFET N/P CHAN 40V SO8L DUAL
More Detail: Mosfet Array N and P-Channel 40V 30A (Tc) 48W Surf...
DataSheet: SQJ500AEP-T1_GE3 datasheetSQJ500AEP-T1_GE3 Datasheet/PDF
Quantity: 1000
3000 +: $ 0.38949
Stock 1000Can Ship Immediately
$ 0.43
Specifications
Series: Automotive, AEC-Q101, TrenchFET®
Packaging: Tape & Reel (TR) 
Part Status: Active
FET Type: N and P-Channel
FET Feature: --
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 27 mOhm @ 6A, 10V
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 38.1nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1850pF @ 20V
Power - Max: 48W
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Supplier Device Package: PowerPAK® SO-8 Dual
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

SQJ500AEP-T1_GE3 is a series of transistor arrays from ETC (Electronic Transistor Company). The series features two- and three-gate FETs (Field Effect Transistors) in an array configuration. Each array contains six transistors that share a common source and five different gates.

SQJ500AEP-T1_GE3 transistors are used primarily in high-speed logic applications such as power amplifiers, audio amplifiers, switching converters, power supply management, and instrumentation.

Application Field: The SQJ500AEP-T1_GE3 transistors\' broad application field allows it to be used in a wide variety of circuits, including high-speed logic, analog signal processing, and power amplification.

Working Principle: Each transistor in the array contains two terminals, which are connected to the source/gate and drain/gate respectively. All transistors share a common source. When the FETs are connected in parallel, the current from the source is shared between the transistors. Each transistor in the array is then driven by a separate gate.

The main purpose of SQJ500AEP-T1_GE3 arrays is to provide a higher degree of control and reliability compared to discrete components. With a three terminal array, the third gate adds another layer of control. This additional power at the gate allows for greater control over voltage and current, thus increasing the speed and reliability of the overall circuit.

The SQJ500AEP-T1_GE3 arrays also have a lower drain-to-source capacitance and voltage drop compared to discrete components. This results in an increase in operating frequency, improved thermal stability and improved gate noise immunity, which makes them well suited for audio and power applications.

Overall, the SQJ500AEP-T1_GE3 series of transistors offers a high degree of control and reliability through the use of a three-gate FET array. This makes them ideal for use in high-speed logic, analog signal processing, and power amplification.

The specific data is subject to PDF, and the above content is for reference

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