Allicdata Part #: | SQJ570EP-T1_GE3TR-ND |
Manufacturer Part#: |
SQJ570EP-T1_GE3 |
Price: | $ 0.32 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET N/P-CH 100V POWERPAK SO8 |
More Detail: | Mosfet Array N and P-Channel 100V 15A (Tc), 9.5A (... |
DataSheet: | SQJ570EP-T1_GE3 Datasheet/PDF |
Quantity: | 1000 |
3000 +: | $ 0.29212 |
Specifications
Series: | Automotive, AEC-Q101, TrenchFET® |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
FET Type: | N and P-Channel |
FET Feature: | Standard |
Drain to Source Voltage (Vdss): | 100V |
Current - Continuous Drain (Id) @ 25°C: | 15A (Tc), 9.5A (Tc) |
Rds On (Max) @ Id, Vgs: | 45 mOhm @ 6A, 10V, 146 mOhm @ 6A, 10V |
Vgs(th) (Max) @ Id: | 2.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 20nC @ 10V, 15nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: | 650pF @ 25V, 600pF @ 25V |
Power - Max: | 27W |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | PowerPAK® SO-8 Dual |
Supplier Device Package: | PowerPAK® SO-8 Dual |
Description
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The SQJ570EP-T1_GE3 is a unique and powerful semiconductor component. It is a high voltage, high current, and high power insulated gate bipolar transistor array consisting of three transistor cells and an integrated gate return resistor. The SQJ570EP-T1_GE3 can be used as an efficient voltage regulator in applications such as motor drive, power supply, and line control. It is also a versatile tool in the design of industrial, automotive, and consumer electronics.The SQJ570EP-T1_GE3 belongs to the field-effect transistor (FET) family. FETs are transistors with a gate terminal for input control, and are commonly used for power switching and voltage regulation. The SQJ570EP-T1_GE3 is a specifically designed N-channel FET array with a high drain-source voltage rating of 20 V and a high current rating of 4 A. Its gate return resistor has a maximum power dissipation of 1 W.The SQJ570EP-T1_GE3 utilizes a unique construction technique, whereby the print circuit board (PCB) is integrated with the substrate. This allows the SOS form factor, which saves a significant amount of material and thereby reduces cost. The transistor cells are packed in a plastic capsule to provide both protection and heat dissipation. The integrated construction also ensures that each of the components is working together for maximum performance and power efficiency.To use the SQJ570EP-T1_GE3, all that is required is a voltage input from the power circuit. When the voltage is applied to the gate terminal, it will turn on the device, allowing current to flow from the source to the drain. The integrated gate return resistor reduces power loss while providing a linear and high output current. The SQJ570EP-T1_GE3 can be used to control current, measure current, or even both.The SQJ570EP-T1_GE3 is an exceptionally efficient and reliable device. It has a very low input threshold voltage and has both an on-state and off-state breakdown voltage. The output impedance is low, meaning that the device maintains a steady current even when the load changes. Additionally, it has fast switching speeds, meaning that it can provide fast switching between the on and off states.The SQJ570EP-T1_GE3 is ideal for many applications, such as motor control, power supplies, and automation. It can be used for applications where high voltage, high current, and high power are required. It can also be used in DC/DC converter circuits, switching power supplies, motor drives, inverters, and more.The SQJ570EP-T1_GE3 is a powerful and reliable component, with many features and applications. It is an efficient and cost-effective solution for many different industrial, automotive, and consumer electronics applications.
The specific data is subject to PDF, and the above content is for reference
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