| Allicdata Part #: | SQJ560EP-T1_GE3TR-ND |
| Manufacturer Part#: |
SQJ560EP-T1_GE3 |
| Price: | $ 0.40 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Vishay Siliconix |
| Short Description: | MOSFET DUAL N P CH 60V PPAK SO-8 |
| More Detail: | Mosfet Array N and P-Channel 60V 30A (Tc), 18A (Tc... |
| DataSheet: |  SQJ560EP-T1_GE3 Datasheet/PDF |
| Quantity: | 1000 |
| 3000 +: | $ 0.35906 |
| Series: | Automotive, AEC-Q101, TrenchFET® |
| Packaging: | Tape & Reel (TR) |
| Part Status: | Active |
| FET Type: | N and P-Channel |
| FET Feature: | Standard |
| Drain to Source Voltage (Vdss): | 60V |
| Current - Continuous Drain (Id) @ 25°C: | 30A (Tc), 18A (Tc) |
| Rds On (Max) @ Id, Vgs: | 12 mOhm @ 10A, 10V, 52.6 mOhm @ 10A, 10V |
| Vgs(th) (Max) @ Id: | 2.5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs: | 30nC @ 10V, 45nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds: | 1650pF @ 25V |
| Power - Max: | 34W (Tc) |
| Operating Temperature: | -55°C ~ 175°C (TJ) |
| Mounting Type: | Surface Mount |
| Package / Case: | PowerPAK® SO-8 Dual |
| Supplier Device Package: | PowerPAK® SO-8 Dual |
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SQJ560EP-T1_GE3 is a high-performance power semiconductor device manufactured by Shenzhen C-Power Optoelectronic Technology Co., LTD. This semiconductor device is classified as a transistor-FETs, MOSFETs-Array. It is a 64-channel, bidirectional, high-frequency switching transistor-FETs, MOSFETs-Array device. It is specifically designed to provide high-powered switching needs in complex electronic network applications.
The applications of SQJ560EP-T1_GE3 are mainly used in distributed control systems, industrial automation, switch control and analog/digital communication systems. It features ultra-low power consumption and good power transmission efficiency, making it suitable for use with low-voltage AC and DC power sources. It also has a wide frequency range, making it suitable for applications in microwave communications, navigation, navigation and industrial automation.
The working principle of SQJ560EP-T1_GE3 involves the operation of transistors and Field-effect transistors (FETs). In this type of device, the current flow is controlled by the input signal and the field effect of the source-drain voltage. By applying a voltage or Small signal to the gate and drain, the conductance of the device can be controlled, thus affecting the current flow in the circuit and the output of the device.
SQJ560EP-T1_GE3 features a robust design. It has high system reliability and large dynamic range with low on-resistance and high switching speed. It also offers excellent EMC performance and low thermal resistance. Moreover, the device can operate at temperatures ranging from -40℃ to 125℃.
Overall, the SQJ560EP-T1_GE3 is a reliable and efficient power semiconductor device with many advanced features. It is suitable for a wide range of applications in high-performance systems and provides excellent performance in terms of power efficiency and reliability.
The specific data is subject to PDF, and the above content is for reference
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