Allicdata Part #: | SQJ504EP-T1_GE3TR-ND |
Manufacturer Part#: |
SQJ504EP-T1_GE3 |
Price: | $ 0.43 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET N/P CHAN 40V POWERPAK SO- |
More Detail: | Mosfet Array N and P-Channel 40V 30A (Tc) 34W (Tc)... |
DataSheet: | SQJ504EP-T1_GE3 Datasheet/PDF |
Quantity: | 1000 |
3000 +: | $ 0.38949 |
Series: | Automotive, AEC-Q101, TrenchFET® |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
FET Type: | N and P-Channel |
FET Feature: | Standard |
Drain to Source Voltage (Vdss): | 40V |
Current - Continuous Drain (Id) @ 25°C: | 30A (Tc) |
Rds On (Max) @ Id, Vgs: | 7.5 mOhm @ 8A, 10V, 17 mOhm @ 8A, 10V |
Vgs(th) (Max) @ Id: | 2.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 30nC @ 10V, 85nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: | 1900pF @ 25V, 4600pF @ 25V |
Power - Max: | 34W (Tc) |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | 8-PowerTDFN |
Supplier Device Package: | PowerPAK® SO-8 Dual |
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The SQJ504EP-T1_GE3 MOSFET array is a powerful device used in a variety of applications including power switching, logic level shifting, and motor control. It can be used to control DC and AC currents in home appliances, lighting systems, and security equipment. The device is a 6 transistor MOSFET array with both drain and source connections integrated into one package. This makes the SQJ504EP-T1_GE3 array a cost-effective, space-saving solution for designers looking to add power switching to their designs.
The SQJ504EP-T1_GE3 array uses a MOSFET technology called n-channel enhancement mode. This is where a channel of mobile carriers is created between the source and the drain when a voltage difference is applied between the gate and the source. This creates a channel for current to flow between the source and the drain, allowing for precise control of current flow in the circuit.
The SQJ504EP-T1_GE3 array contains 6 independent MOSFETs housed in a single package, each with its own source, drain, and gate connections. This allows for precise control of 6 different outputs at the same time. For example, when used in motor control applications, each MOSFET can be programmed to control different levels of current to each motor in the circuit. This makes the SQJ504EP-T1_GE3 array a compact solution for controlling multiple outputs in a cost-effective manner.
To further enhance its functionality, the SQJ504EP-T1_GE3 array also includes ESD protection on each of the MOSFET channels. This protection provides up to 30kV protection on each channel, safeguarding the device from potentially harmful static discharges that can damage the circuit and its components. This makes the SQJ504EP-T1_GE3 array an ideal choice for applications that require high levels of protection from ESD.
In addition to its many features, the SQJ504EP-T1_GE3 array also offers excellent thermal and electrical performance. It is rated for up to -55C to +150C operating temperatures and at a maximum drain-source current of 8A per channel. This makes it suitable for a wide range of applications, from light control circuits to high-power switching applications.
The SQJ504EP-T1_GE3 array is a versatile and powerful MOSFET array that is suitable for a wide range of applications. Its integrated ESD protection, low-cost, high-efficiency, and space-saving design make it an ideal choice for power switching and motor control applications. The SQJ504EP-T1_GE3 array is a cost-effective solution for those looking to leverage the power and versatility of MOSFET array technology.
The specific data is subject to PDF, and the above content is for reference
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