SQM100N02-3M5L_GE3

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The SQM100N02-3M5L_GE3 is a semiconductor component used in a variety of applications. It is a silicon N-channel enhancement-mode metal-oxide- semiconductor field-effect transistor (MOSFET).

Applications

The SQM100N02-3M5L_GE3 is designed for a range of applications which require high quality, high voltage performance transistors. Examples include audio amplifiers, switching regulators, motor controls, DC-DC converters, mobile phones and other consumer electronics. The device is a popular choice due to its low cost, low on-state resistance and exceptional reliability.

In audio applications, the SQM100N02-3M5L_GE3 can be used as an amplifier with excellent sound reproduction. It can produce low distortion, high output power, and low frequency response. The device can also be used in switching regulator and DC-DC converter designs which require high efficiency and low noise.

The SQM100N02-3M5L_GE3 can also be used in motor control applications as it is capable of carrying large loads at high switching speeds with low losses. It is commonly used in the power section of brushless DC motors to control the current flow.

The device is also useful in mobile phone designs due to its low power consumption and thermal characteristics. The device is capable of operating at low temperatures for extended periods of time without suffering any performance degradation.

Working Principle

The SQM100N02-3M5L_GE3 is a voltage-controlled device which operates using the principle of the metal-oxide-semiconductor field effect. A gate voltage is applied to the device which causes an electric field to be generated at the interface between the gate insulator and the substrate material. This electric field modulates the amount of current that can flow between the source and the drain. The higher the gate voltage, the greater the current flow.

The device has an internal structure which is designed to minimize capacitance at the gate-drain junction. This minimizes the amount of energy needed to control the device and ensures that the device responds quickly to changes in the gate voltage. It also ensures that the device operates at high frequencies with minimal distortion.

The SQM100N02-3M5L_GE3 is a reliable device which is suitable for a wide range of applications. It comes in a small SOT-23 package and is capable of operating at high temperatures. It is a popular choice for a variety of consumer electronics applications due its low cost, low on-state resistance and excellent thermal characteristics.

The specific data is subject to PDF, and the above content is for reference