| Allicdata Part #: | SQM100N04-2M7_GE3-ND |
| Manufacturer Part#: |
SQM100N04-2M7_GE3 |
| Price: | $ 0.99 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Vishay Siliconix |
| Short Description: | MOSFET N-CH 40V 100A TO-263 |
| More Detail: | N-Channel 40V 100A (Tc) 157W (Tc) Surface Mount TO... |
| DataSheet: | SQM100N04-2M7_GE3 Datasheet/PDF |
| Quantity: | 1000 |
| 800 +: | $ 0.89287 |
| Vgs(th) (Max) @ Id: | 3.5V @ 250µA |
| Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Supplier Device Package: | TO-263 (D²Pak) |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 175°C (TJ) |
| Power Dissipation (Max): | 157W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 7910pF @ 25V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 145nC @ 10V |
| Series: | Automotive, AEC-Q101, TrenchFET® |
| Rds On (Max) @ Id, Vgs: | 2.7 mOhm @ 30A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 100A (Tc) |
| Drain to Source Voltage (Vdss): | 40V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tape & Reel (TR) |
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.The SQM100N04-2M7_GE3 is a single transistor widely used in the fields of power electronics and distribution systems. It is a MOSFET, or metal-oxide-semiconductor field-effect transistor. This transistor has a high voltage, high current, and low on-state resistance that make it ideal for many applications. In addition, it has low switching losses, low switching time, and low gate charge, making it perfectly suited for power and distribution systems.
MOSFETs are different from other transistors such as BJTs or IGBTs in that they are voltage-controlled devices and do not require a gate current to switch them on. Instead, the MOSFET relies on an external bias voltage to control the flow of current. This makes it possible to create high-efficiency, low-loss, and fast switching circuits.
The SQM100N04-2M7_GE3 has a gate voltage range of -2 to +20 volts and a gate current of 110mA. It is capable of operating at a drain voltage of up to 1000V, and it has a breakdown voltage of 800V. In addition, the transistor can handle currents up to 150A, making it suitable for applications like power supplies, motor control, and inverters.
The working principle of the SQM100N04-2M7_GE3 is based on the MOSFET’s four terminals and the voltage applied to them. Applying a positive voltage to the gate terminal allows the MOSFET to pass current between the two other terminals, the source and the drain. Conversely, applying a negative voltage or no voltage blocks the flow of current.
In power electronics applications, the SQM100N04-2M7_GE3 is used to switch high voltage and high power devices quickly and efficiently. Its high power and high current capability make it ideal for use as a switch in motor drives, power supplies, and inverter circuits. This transistor can also be used as an amplifier, providing signal gain and low noise to audio circuits and instrumentation.
The SQM100N04-2M7_GE3 is designed for high reliability and low power consumption. It is capable of withstanding extreme temperatures and stress, making it suitable for use in environmental, industrial, and automotive applications. Additionally, its low on-state resistance provides low switching losses, improving system performance.
In summary, the SQM100N04-2M7_GE3 is a single MOSFET transistor that can be used in a variety of applications requiring power, high current, and high voltage capabilities. Its low on-state resistance and high switching performance make it ideal for high-power applications. This transistor also offers high reliability, low power consumption, and the ability to withstand extreme temperatures and stress. It is a versatile and reliable transistor that is used in a wide range of applications.
The specific data is subject to PDF, and the above content is for reference
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SQM100N04-2M7_GE3 Datasheet/PDF