
Allicdata Part #: | SQM35N30-97_GE3-ND |
Manufacturer Part#: |
SQM35N30-97_GE3 |
Price: | $ 1.38 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET N-CH 300V 35A TO263 |
More Detail: | N-Channel 300V 35A (Tc) 375W (Tc) Surface Mount TO... |
DataSheet: | ![]() |
Quantity: | 1000 |
800 +: | $ 1.23890 |
Vgs(th) (Max) @ Id: | 3.5V @ 250µA |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package: | TO-263 (D²Pak) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 375W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 5650pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 130nC @ 10V |
Series: | Automotive, AEC-Q101, TrenchFET® |
Rds On (Max) @ Id, Vgs: | 97 mOhm @ 10A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 35A (Tc) |
Drain to Source Voltage (Vdss): | 300V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The SQM35N30-97_GE3 is a metal-oxide semiconductor field-effect transistor (MOSFET), a type of transistor based on the insulated-gate field-effect (IGFET) structure. This type of MOSFET is a single device, as opposed to a dual device, which is also known as a dual-gate MOSFET. This particular device is a lateral double-diffused MOSFET, or a LDMOSFET, which is an enhanced version of the regular MOSFET, capable of operating with much higher levels of power.
The SQM35N30-97_GE3 is used for switching operations and is capable of working at very high frequencies, up to 2.4GHz, as well as working with loads with high inductive values, such as relay coils. This particular device is especially useful for switch-mode power supplies as it can endure high voltage and current levels. With a drain-source breakdown voltage of 300V, a channel-to-channel isolation voltage of 800V, and a maximum drain current rating of 35A, the SQM35N30-97_GE3 is a powerful device that can be used in a variety of applications.
The working principle behind the SQM35N30-97_GE3 is that of the positive channel and negative channel. The positive channel is the "gate" of the device, while the negative channel is the "source." The positive channel is where an electric field is created when an applied voltage is greater than the threshold voltage. This electric field then creates a channel between the source and the drain (or the load). As the load draws current through the channel, the voltage across the source-drain drops, which then prevents the channel from closing. In other words, this provides the "on" state for the device.
The SQM35N30-97_GE3 is primarily used in switching circuits and power supplies, where its ability to work with high inductive values and high voltages makes it highly desirable. In addition, its high frequency capabilities and low gate capacitance also make it useful in radio frequency (RF) applications. This MOSFET is also used in applications such as motor controllers, grid-tie inverters, and solar-panel controllers.
The SQM35N30-97_GE3 is a powerful, versatile, and cost-effective device that is suitable for a wide range of applications. Its high power and current ratings, as well as its high-frequency and high-voltage capabilities, make it a highly desirable device for many applications, such as switch-mode power supplies, RF applications, motor controllers, grid-tie inverters, and solar-panel controllers.
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