SQM50N04-4M0L_GE3

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The SQM50N04-4M0L_GE3 is a N channel enhancement mode logic level field effect transistor (FET). Typical applications of this transistor include low side load switch, gate/level shifter, power voltage supressor, reverse battery protection, and so on. Other standard applications of the SQM50N04-4M0L_GE3 include current limiting, surge protection, defense circuits for solenoid coils and transformers, and voltage regulation.

This product has a low on-state resistance and can handle a maximum drain-source voltage of 44 V. It can also operate at temperatures up to 175°C. It has a maximum drain current of 500 mA and a maximum gate-source voltage of 10 V. Its maximum 2.5 kHz switching frequency makes it suitable for a wide range of high-speed switching applications. This transistor is also available in different packages.

The working principle of the SQM50N04-4M0L_GE3 is based on the principles of field-effect transistor (FET) technology. This transistor is composed of a semiconductor material such as silicon, with two separate terminal regions. One region is the source, which supplies electrons to the channel region, and the other region is the drain which collects the electrons flowing through the channel.

When the voltage applied to the gate terminal is increased, the electrical field produced by it will be increased. This in turn modulates the thickness of the channel between the source and the drain, which controls the flow of electrons between the source and the drain. As the flow of electrons increase, the drain-source current also increases.

This increase in the drain-source current is beneficial for applications like switching, or when the device is used as a voltage regulator. The amount of voltage that can be produced is dependent on the width of the channel produced by the applied gate voltage. The device will automatically adjust the drain-source current for the desired effect.

The SQM50N04-4M0L_GE3 is an ideal choice for high-performance applications like low side load switch, gate/level shifter, power voltage supressor, reverse battery protection, and so on. It has an excellent switching speed and a high surge current capability. Additionally, it has a compact footprint and is available in a wide range of packages. It also has an integrated latch-up protection and a built-in ESD protection.

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